The Role of Dissociative Electron Attachment in Focused Electron Beam Induced Processing: A Case Study on Cobalt Tricarbonyl Nitrosyl

2011 ◽  
Vol 50 (40) ◽  
pp. 9475-9477 ◽  
Author(s):  
Sarah Engmann ◽  
Michal Stano ◽  
Štefan Matejčík ◽  
Oddur Ingólfsson
Keyword(s):  
Electron Beam ◽  
Electron Attachment ◽  
Dissociative Electron Attachment

scholarly journals Formation and decay of negative ion states up to 11 eV above the ionization energy of the nanofabrication precursor HFeCo3(CO)12

2017 ◽  
Vol 8 (9) ◽  
pp. 5949-5952 ◽  
Author(s):  
Ragesh Kumar T P ◽  
Ragnar Bjornsson ◽  
Sven Barth ◽  
Oddur Ingólfsson
Keyword(s):  
Electron Beam ◽  
Ionization Energy ◽  
Electron Attachment ◽  
Negative Ion ◽  
Dissociative Electron Attachment ◽  
Potential Significance ◽  
Electron Beam Induced Deposition

Dissociative electron attachment, 11 eV above the ionization energy of the focused electron beam induced deposition (FEBID) precursor HFeCo3(CO)12. A unique observation with potential significance for FEBID precursor design.

Photoinduced dissociative electron attachment of CH3Br on Pt(111): The role of the local work function

1992 ◽  
Vol 96 (12) ◽  
pp. 9114-9121 ◽  
Author(s):  
V. A. Ukraintsev ◽  
T. J. Long ◽  
T. Gowl ◽  
I. Harrison
Keyword(s):  
Work Function ◽  
Electron Attachment ◽  
Dissociative Electron Attachment ◽  
Local Work

The role of dissociative electron attachment to metal halides in a low-pressure glow discharge

2010 ◽  
Vol 4 (1) ◽  
pp. 1-7 ◽  
Author(s):  
S. O. Adamson ◽  
M. A. Deminskii ◽  
A. V. Zaitsevskii ◽  
B. V. Potapkin ◽  
M. Ya. Tudorovskaya ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Electron Attachment ◽  
Low Pressure ◽  
Dissociative Electron Attachment ◽  
Metal Halides ◽  
Pressure Glow Discharge

scholarly journals Electron-Induced Decomposition of Uracil-5-yl O-(N,N-dimethylsulfamate): Role of Methylation in Molecular Stability

2021 ◽  
Vol 22 (5) ◽  
pp. 2344
Author(s):  
Eugene Arthur-Baidoo ◽  
Karina Falkiewicz ◽  
Lidia Chomicz-Mańka ◽  
Anna Czaja ◽  
Sebastian Demkowicz ◽  
...  
Keyword(s):  
Gas Phase ◽  
Quantum Chemical ◽  
Electron Attachment ◽  
Dissociative Electron Attachment ◽  
Stabilization Method ◽  
Radical Species ◽  
Molecular Stability ◽  
Resonance Stabilization ◽  
Induced Decomposition

The incorporation of modified uracil derivatives into DNA leads to the formation of radical species that induce DNA damage. Molecules of this class have been suggested as radiosensitizers and are still under investigation. In this study, we present the results of dissociative electron attachment to uracil-5-yl O-(N,N-dimethylsulfamate) in the gas phase. We observed the formation of 10 fragment anions in the studied range of electron energies from 0–12 eV. Most of the anions were predominantly formed at the electron energy of about 0 eV. The fragmentation paths were analogous to those observed in uracil-5-yl O-sulfamate, i.e., the methylation did not affect certain bond cleavages (O-C, S-O and S-N), although relative intensities differed. The experimental results are supported by quantum chemical calculations performed at the M06-2X/aug-cc-pVTZ level of theory. Furthermore, a resonance stabilization method was used to theoretically predict the resonance positions of the fragment anions O− and CH3−.

scholarly journals Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

2017 ◽  
Vol 8 ◽  
pp. 2376-2388 ◽  
Author(s):  
Ragesh Kumar T P ◽  
Sangeetha Hari ◽  
Krishna K Damodaran ◽  
Oddur Ingólfsson ◽  
Cornelis W Hagen
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Proximity Effect ◽  
Electron Attachment ◽  
Deposition Process ◽  
High Energy ◽  
Dissociative Ionization ◽  
Dissociative Electron Attachment ◽  
Electron Beam Induced Deposition

We present first experiments on electron beam induced deposition of silacyclohexane (SCH) and dichlorosilacyclohexane (DCSCH) under a focused high-energy electron beam (FEBID). We compare the deposition dynamics observed when growing pillars of high aspect ratio from these compounds and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to dissociative electron attachment, SCH is inert with respect to this process. We discuss our deposition experiments in context of the efficiency of these different electron-induced fragmentation processes. With regards to the deposition dynamics, we observe a substantially faster growth from DCSCH and a higher saturation diameter when growing pillars with high aspect ratio. However, both compounds show similar behaviour with regards to the proximity effect. With regards to the composition of the deposits, we observe that the C/Si ratio is similar for both compounds and in both cases close to the initial molecular stoichiometry. The oxygen content in the DCSCH deposits is about double that of the SCH deposits. Only marginal chlorine is observed in the deposits of from DCSCH. We discuss these observations in context of potential approaches for Si deposition.

Sign in / Sign up

Export Citation Format

Share Document