Dry reforming of CH4/CO2 by stable Ni nanocrystal on porous single‐crystalline MgO monoliths at reduced temperatures

2021 ◽  
Author(s):  
Kui Xie ◽  
Fangyuan Cheng ◽  
Xiuyun Duan
Keyword(s):  
Dry Reforming ◽  
Single Crystalline

scholarly journals Response to Comment on “Dry reforming of methane by stable Ni–Mo nanocatalysts on single-crystalline MgO”

Science ◽  
2020 ◽  
Vol 368 (6492) ◽  
pp. eabb5680
Author(s):  
Youngdong Song ◽  
Ercan Ozdemir ◽  
Sreerangappa Ramesh ◽  
Aldiar Adishev ◽  
Saravanan Subramanian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dry Reforming ◽  
Dry Reforming Of Methane ◽  
Single Crystalline

Hu and Ruckenstein state that our findings were overclaimed and not new, despite our presentation of evidence for the Nanocatalysts on Single Crystal Edges (NOSCE) mechanism. Their arguments do not take into account fundamental differences between our Ni-Mo/MgO catalyst and their NiO/MgO preparations.

Dry reforming of methane by stable Ni–Mo nanocatalysts on single-crystalline MgO

Science ◽  
2020 ◽  
Vol 367 (6479) ◽  
pp. 777-781 ◽  
Author(s):  
Youngdong Song ◽  
Ercan Ozdemir ◽  
Sreerangappa Ramesh ◽  
Aldiar Adishev ◽  
Saravanan Subramanian ◽  
...  
Keyword(s):  
Large Scale ◽  
Gas Flow ◽  
Carbon Fixation ◽  
High Volume ◽  
Dry Reforming ◽  
Dry Reforming Of Methane ◽  
Single Crystalline ◽  
Mgo Support ◽  
Synchrotron Studies ◽  
Reactive Gas

Large-scale carbon fixation requires high-volume chemicals production from carbon dioxide. Dry reforming of methane could provide an economically feasible route if coke- and sintering-resistant catalysts were developed. Here, we report a molybdenum-doped nickel nanocatalyst that is stabilized at the edges of a single-crystalline magnesium oxide (MgO) support and show quantitative production of synthesis gas from dry reforming of methane. The catalyst runs more than 850 hours of continuous operation under 60 liters per unit mass of catalyst per hour reactive gas flow with no detectable coking. Synchrotron studies also show no sintering and reveal that during activation, 2.9 nanometers as synthesized crystallites move to combine into stable 17-nanometer grains at the edges of MgO crystals above the Tammann temperature. Our findings enable an industrially and economically viable path for carbon reclamation, and the “Nanocatalysts On Single Crystal Edges” technique could lead to stable catalyst designs for many challenging reactions.

scholarly journals Comment on “Dry reforming of methane by stable Ni–Mo nanocatalysts on single-crystalline MgO”

Science ◽  
2020 ◽  
Vol 368 (6492) ◽  
pp. eabb5459 ◽  
Author(s):  
Yun Hang Hu ◽  
Eli Ruckenstein
Keyword(s):  
Solid Solution ◽  
Dry Reforming ◽  
Dry Reforming Of Methane ◽  
Single Crystalline

Song et al. (Reports, 14 February 2020, p. 777) ignore the reported efficient Ni/MgO solid-solution catalysts and overstate the novelty and importance of the Mo-doped Ni/MgO catalysts for the dry reforming of methane. We show that the Ni/MgO solid-solution catalyst that we reported in 1995, which is efficient and stable for the dry reforming, is superior to the Mo-doped Ni/MgO catalyst.

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Synthesis of Jumbo-size Single Crystalline Bi$lt;inf$gt;2$lt;/inf$gt;Se$lt;inf$gt;3$lt;/inf$gt; Nanoplates and Nanoribbons by Vapor Transportation

2014 ◽  
Vol 29 (11) ◽  
pp. 1199
Author(s):  
LI Xiao-Shuai ◽  
WANG Zeng-Mei ◽  
ZHU Ming-Fang ◽  
WANG Shan-Peng ◽  
TAO Xu-Tang ◽  
...  
Keyword(s):  
Single Crystalline

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Indentation response of single-crystalline GaAs in the nano-, micro-, and macroregime

2007 ◽  
Vol 98 (8) ◽  
pp. 735-741 ◽  
Author(s):  
Frank Bergner ◽  
Michael Schaper ◽  
Ralf Hammer ◽  
Manfred Jurisch ◽  
Andre Kleinwechter ◽  
...  
Keyword(s):  
Single Crystalline ◽  
Indentation Response

Plasticity of Single Crystalline Al3X Intermetallic Compounds

1991 ◽  
Author(s):  
David E. Luzzi ◽  
David P. Pope ◽  
Vaclay Vitek
Keyword(s):  
Intermetallic Compounds ◽  
Single Crystalline
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