scholarly journals Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

2020 ◽  
Vol 6 (11) ◽  
pp. 2000439
Author(s):  
Stefan Petzold ◽  
Eszter Piros ◽  
Robert Eilhardt ◽  
Alexander Zintler ◽  
Tobias Vogel ◽  
...  
Keyword(s):  
Yttrium Oxide ◽  
Switching Dynamics ◽  
Multi Level ◽  
Level Quantization

Error diffusion concept for multi-level quantization

1990 ◽  
Vol 79 (5) ◽  
pp. 280-284 ◽  
Author(s):  
Manfred Broja ◽  
Kristina Michalowski ◽  
Olof Bryngdahl
Keyword(s):  
Error Diffusion ◽  
Multi Level ◽  
Level Quantization

scholarly journals Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review

2021 ◽  
Vol 15 ◽  
Author(s):  
Cheng Wang ◽  
Amogh Agrawal ◽  
Eunseon Yu ◽  
Kaushik Roy
Keyword(s):  
Domain Switching ◽  
Alternative Pathway ◽  
Ion Motion ◽  
Hardware Development ◽  
Switching Dynamics ◽  
Neuromorphic Hardware ◽  
Device Structures ◽  
Multi Level ◽  
Ferroic Materials ◽  
Non Destructive

Achieving multi-level devices is crucial to efficiently emulate key bio-plausible functionalities such as synaptic plasticity and neuronal activity, and has become an important aspect of neuromorphic hardware development. In this review article, we focus on various ferromagnetic (FM) and ferroelectric (FE) devices capable of representing multiple states, and discuss the usage of such multi-level devices for implementing neuromorphic functionalities. We will elaborate that the analog-like resistive states in ferromagnetic or ferroelectric thin films are due to the non-coherent multi-domain switching dynamics, which is fundamentally different from most memristive materials involving electroforming processes or significant ion motion. Both device fundamentals related to the mechanism of introducing multilevel states and exemplary implementations of neural functionalities built on various device structures are highlighted. In light of the non-destructive nature and the relatively simple physical process of multi-domain switching, we envision that ferroic-based multi-state devices provide an alternative pathway toward energy efficient implementation of neuro-inspired computing hardware with potential advantages of high endurance and controllability.

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