Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review

Achieving multi-level devices is crucial to efficiently emulate key bio-plausible functionalities such as synaptic plasticity and neuronal activity, and has become an important aspect of neuromorphic hardware development. In this review article, we focus on various ferromagnetic (FM) and ferroelectric (FE) devices capable of representing multiple states, and discuss the usage of such multi-level devices for implementing neuromorphic functionalities. We will elaborate that the analog-like resistive states in ferromagnetic or ferroelectric thin films are due to the non-coherent multi-domain switching dynamics, which is fundamentally different from most memristive materials involving electroforming processes or significant ion motion. Both device fundamentals related to the mechanism of introducing multilevel states and exemplary implementations of neural functionalities built on various device structures are highlighted. In light of the non-destructive nature and the relatively simple physical process of multi-domain switching, we envision that ferroic-based multi-state devices provide an alternative pathway toward energy efficient implementation of neuro-inspired computing hardware with potential advantages of high endurance and controllability.

Toroidal polar topology in strained ferroelectric polymer

Polar topological texture has become an emerging research field for exotic phenomena and potential applications in reconfigurable electronic devices. We report toroidal topological texture self-organized in a ferroelectric polymer, poly(vinylidene fluoride-ran-trifluoroethylene) [P(VDF-TrFE)], that exhibits concentric topology with anticoupled chiral domains. The interplay among the elastic, electric, and gradient energies results in continuous rotation and toroidal assembly of the polarization perpendicular to polymer chains, whereas relaxor behavior is induced along polymer chains. Such toroidal polar topology gives rise to periodic absorption of polarized far-infrared (FIR) waves, enabling the manipulation of the terahertz wave on a mesoscopic scale. Our observations should inform design principles for flexible ferroic materials toward complex topologies and provide opportunities for multistimuli conversions in flexible electronics.

Terahertz optics-driven phase transition in two-dimensional multiferroics

Displacive martensitic phase transition is potentially promising in semiconductor-based data storage applications with fast switching speed. In addition to traditional phase transition materials, the recently discovered two-dimensional ferroic materials are receiving a lot of attention owing to their fast ferroic switching dynamics, which could tremendously boost data storage density and enhance read/write speed. In this study, we propose that a terahertz laser with an intermediate intensity and selected frequency can trigger ferroic order switching in two-dimensional multiferroics, which is a damage-free noncontacting approach. Through first-principles calculations, we theoretically and computationally investigate optically induced electronic, phononic, and mechanical responses of two experimentally fabricated multiferroic (with both ferroelastic and ferroelectric) materials, β-GeSe and α-SnTe monolayer. We show that the relative stability of different orientation variants can be effectively manipulated via the polarization direction of the terahertz laser, which is selectively and strongly coupled with the transverse optical phonon modes. The transition from one orientation variant to another can be barrierless, indicating ultrafast transition kinetics and the conventional nucleation-growth phase transition process can be avoidable.

Unveiling the high-temperature dielectric response of $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$

Understanding the physics behind changes in dielectric permittivity and mechanical response with temperature and frequency in lead-free ferroic materials is a fundamental key to achieve optimal properties and to guarantee good performance in the technological applications envisaged. In this work, dense $$\text {Bi}_{0.5}\text {Na}_{0.5}\text {TiO}_{3}$$ Bi 0.5 Na 0.5 TiO 3 (BNT) electroceramics were prepared through solid-state reaction of high-grade oxide reagents, followed by sintering at high temperature (1393 K for 3 h). In good agreement with previous reports in the literature, the thermal behaviour of dielectric response from these BNT materials showed the occurrence of a high-temperature diffuse-like permittivity peak, whose origin has been so far controversial. Thermally stimulated depolarization current, impedance and mechanical spectroscopies measurements were here conducted, over a wide range of temperature and frequency, to get a deep insight into the mechanism behind of this event. The approach included considering both as-sintered and reduced BNT samples, from which it is demonstrated that the broad high-temperature dielectric peak originates from interfacial polarization involving oxygen vacancies-related space-charge effects that develop at the grain-to-grain contacts. This mechanism, that contributes to the anomalous behavior observed in the mechanical response at low frequencies, could also be responsible for the presence of ferroelastic domains up to high temperatures.

Flexopiezoelectricity at ferroelastic domain walls in WO3 films

The emergence of a domain wall property that is forbidden by symmetry in bulk can offer unforeseen opportunities for nanoscale low-dimensional functionalities in ferroic materials. Here, we report that the piezoelectric response is greatly enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a large strain gradient of 106 m−1, which exists over a rather wide width (~20 nm) of the wall. The interrelationship between the strain gradient, electric polarity, and the electromechanical property is scrutinized by detecting of the lattice distortion using atomic scale strain analysis, and also by detecting the depolarized electric field using differential phase contrast technique. We further demonstrate that the domain walls can be manipulated and aligned in specific directions deterministically using a scanning tip, which produces a surficial strain gradient. Our findings provide the comprehensive observation of a flexopiezoelectric phenomenon that is artificially controlled by externally induced strain gradients.

Visualization of ferroaxial domains in an order-disorder type ferroaxial crystal

Ferroaxial materials that exhibit spontaneous ordering of a rotational structural distortion with an axial vector symmetry have gained growing interest, motivated by recent extensive studies on ferroic materials. As in conventional ferroics (e.g., ferroelectrics and ferromagnetics), domain states will be present in the ferroaxial materials. However, the observation of ferroaxial domains is non-trivial due to the nature of the order parameter, which is invariant under both time-reversal and space-inversion operations. Here we propose that NiTiO3 is an order-disorder type ferroaxial material, and spatially resolve its ferroaxial domains by using linear electrogyration effect: optical rotation in proportion to an applied electric field. To detect small signals of electrogyration (order of 10−5 deg V−1), we adopt a recently developed difference image-sensing technique. Furthermore, the ferroaxial domains are confirmed on nano-scale spatial resolution with a combined use of scanning transmission electron microscopy and convergent-beam electron diffraction. Our success of the domain visualization will promote the study of ferroaxial materials as a new ferroic state of matter.