Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO 2 Ferroelectric Thin Films

2020 ◽  
Vol 6 (8) ◽  
pp. 2000264 ◽  
Author(s):  
Shuaidong Li ◽  
Dayu Zhou ◽  
Zhixin Shi ◽  
Michael Hoffmann ◽  
Thomas Mikolajick ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Endurance Cycling ◽  
Si Doped

Ion Implantation Synthesis of Si-doped HfO2 Ferroelectric Thin Films

2018 ◽  
Author(s):  
Shinji Migita ◽  
Hiroyuki Ota ◽  
Hiroyuki Yamada ◽  
Keisuke Shibuya ◽  
Akihito Sawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Ferroelectric Thin Films ◽  
Si Doped

Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films

2021 ◽  
Author(s):  
Shuaidong Li ◽  
Dayu Zhou ◽  
Zhixin Shi ◽  
Michael Hoffmann ◽  
Thomas Mikolajick ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Temperature Dependent ◽  
Si Doped

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

2013 ◽  
Vol 103 (19) ◽  
pp. 192904 ◽  
Author(s):  
Dayu Zhou ◽  
Jin Xu ◽  
Qing Li ◽  
Yan Guan ◽  
Fei Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Si Doped

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes
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