scholarly journals Graphene Photodetectors: High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction (Adv. Electron. Mater. 6/2019)

2019 ◽  
Vol 5 (6) ◽  
pp. 1970028
Author(s):  
Kyoung Eun Chang ◽  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Sunwoo Heo ◽  
...  
Keyword(s):  
Near Infrared ◽  
Schottky Junction ◽  
Infrared Photodetector ◽  
High Responsivity

High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction

2019 ◽  
Vol 5 (6) ◽  
pp. 1800957 ◽  
Author(s):  
Kyoung Eun Chang ◽  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Min Gyu Kwon ◽  
Sunwoo Heo ◽  
...  
Keyword(s):  
Near Infrared ◽  
Schottky Junction ◽  
Infrared Photodetector ◽  
High Responsivity

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11232-11239 ◽  
Author(s):  
K. Das ◽  
S. Mukherjee ◽  
S. Manna ◽  
S. K. Ray ◽  
A. K. Raychaudhuri
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Exciting Light ◽  
Infrared Photodetector ◽  
Zero Bias ◽  
Nanowire Diameter ◽  
Si Nanowire ◽  
High Responsivity ◽  
Infra Red ◽  
Msm Photodetectors

Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 8023-8030 ◽  
Author(s):  
Jianghong Wu ◽  
Zhenwei Yang ◽  
Caiyu Qiu ◽  
Yuejiao Zhang ◽  
Zhiqian Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Schottky Junction ◽  
Upconversion Nanoparticles ◽  
Infrared Photodetector

A high performance near-infrared photodetector is achieved by the graphene/GaAs Schottky junction which can be further improved by coating NaYF4:Yb3+/Er3+ nanoparticles.

scholarly journals Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer

Nanophotonics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1573-1579
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Kyoung Eun Chang ◽  
Min Gyu Kwon ◽  
Hyeon Jun Hwang ◽  
...  
Keyword(s):  
Dark Current ◽  
Interfacial Layer ◽  
Near Infrared ◽  
Schottky Junction ◽  
Infrared Photodetector ◽  
Current Ratio ◽  
Specific Detectivity

Abstract The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The responsivity is improved to 1.2 AW−1 with an interfacial layer from 0.5 AW−1 of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 107 W−1 at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors.

Core–shell silicon nanowire array–Cu nanofilm Schottky junction for a sensitive self-powered near-infrared photodetector

2016 ◽  
Vol 4 (46) ◽  
pp. 10804-10811 ◽  
Author(s):  
Chun-Yan Wu ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Cai-Wang Ge ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Infrared Light ◽  
Schottky Junction ◽  
Core Shell ◽  
Infrared Photodetector ◽  
Sinw Array ◽  
Silicon Nanowire Array ◽  
Self Powered

A sensitive self-powered near infrared light photodetector was fabricated by coating a freestanding silicon nanowire (SiNW) array with a layer of Cu nanofilm.

High responsivity and near-infrared photodetector based on graphene/MoSe2 heterostructure

2019 ◽  
Vol 17 (2) ◽  
pp. 020002
Author(s):  
Beiyun Liu Beiyun Liu ◽  
Congya You Congya You ◽  
Chen Zhao Chen Zhao ◽  
Gaoliang Shen Gaoliang Shen ◽  
Yawei Liu Yawei Liu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Photodetector ◽  
High Responsivity
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