Core–shell silicon nanowire array–Cu nanofilm Schottky junction for a sensitive self-powered near-infrared photodetector

2016 ◽  
Vol 4 (46) ◽  
pp. 10804-10811 ◽  
Author(s):  
Chun-Yan Wu ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Cai-Wang Ge ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Infrared Light ◽  
Schottky Junction ◽  
Core Shell ◽  
Infrared Photodetector ◽  
Sinw Array ◽  
Silicon Nanowire Array ◽  
Self Powered

A sensitive self-powered near infrared light photodetector was fabricated by coating a freestanding silicon nanowire (SiNW) array with a layer of Cu nanofilm.

scholarly journals High density core-shell silicon nanowire array for the realization of third generation solar cell

2011 ◽  
Vol 10 ◽  
pp. 33-37 ◽  
Author(s):  
Ludovic Dupré ◽  
Denis Buttard ◽  
Pascal Gentile ◽  
Nicolas Pauc ◽  
Amit Solanki
Keyword(s):  
Solar Cell ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
High Density ◽  
Core Shell ◽  
Third Generation ◽  
Silicon Nanowire Array

scholarly journals Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array

2015 ◽  
Vol 23 (7) ◽  
pp. 8929 ◽  
Author(s):  
Yanmeng Dai ◽  
Hongbing Cai ◽  
Huaiyi Ding ◽  
Zhen Ning ◽  
Nan Pan ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Near Infrared ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Polarization Conversion ◽  
Silicon Nanowire Array

Monolayer graphene film/silicon nanowire array Schottky junction solar cells

2011 ◽  
Vol 99 (13) ◽  
pp. 133113 ◽  
Author(s):  
Chao Xie ◽  
Peng Lv ◽  
Biao Nie ◽  
Jiansheng Jie ◽  
Xiwei Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Graphene Film ◽  
Monolayer Graphene ◽  
Schottky Junction ◽  
Silicon Nanowire Array

Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

Nanoscale ◽  
2018 ◽  
Vol 10 (39) ◽  
pp. 18502-18509 ◽  
Author(s):  
You-Yi Wang ◽  
Ya-Dong Wu ◽  
Wei Peng ◽  
Yong-Hong Song ◽  
Bao Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Nanowire Array ◽  
The Self ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Self Assembled ◽  
Self Powered

The Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array serves as the self-powered near-infrared photodetector.

scholarly journals Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaomei Yao ◽  
Xutao Zhang ◽  
Tingting Kang ◽  
Zhiyong Song ◽  
Qiang Sun ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cooling System ◽  
Variable Temperature ◽  
Light Trapping ◽  
Nanowire Array ◽  
Infrared Light ◽  
Laser Source ◽  
Array Detector ◽  
Weak Light ◽  
Gap States

AbstractA simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81 × 1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the nonlinear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light-trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

scholarly journals Reusable Surface-Enhanced Raman Spectroscopy Substrates Made of Silicon Nanowire Array Coated with Silver Nanoparticles Fabricated by Metal-Assisted Chemical Etching and Photonic Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1531 ◽  
Author(s):  
Shi Bai ◽  
Yongjun Du ◽  
Chunyan Wang ◽  
Jian Wu ◽  
Koji Sugioka
Keyword(s):  
Silver Nanoparticles ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Surface Enhanced Raman Spectroscopy ◽  
Sers Substrate ◽  
Silicon Nanowire Array ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Metal Assisted Chemical Etching

Surface-enhanced Raman spectroscopy (SERS) has advanced over the last four decades and has become an attractive tool for highly sensitive analysis in fields such as medicine and environmental monitoring. Recently, there has been an urgent demand for reusable and long-lived SERS substrates as a means of reducing the costs associated with this technique To this end, we fabricated a SERS substrate comprising a silicon nanowire array coated with silver nanoparticles, using metal-assisted chemical etching followed by photonic reduction. The morphology and growth mechanism of the SERS substrate were carefully examined and the performance of the fabricated SERS substrate was tested using rhodamine 6G and dopamine hydrochloride. The data show that this new substrate provides an enhancement factor of nearly 1 × 108. This work demonstrates that a silicon nanowire array coated with silver nanoparticles is sensitive and sufficiently robust to allow repeated reuse. These results suggest that this newly developed technique could allow SERS to be used in many commercial applications.

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