scholarly journals Fully Si compatible SiN resistive switching memory with large self-rectification ratio

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015021 ◽  
Author(s):  
Sungjun Kim ◽  
Seongjae Cho ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
Rectification Ratio ◽  
Resistive Switching Memory ◽  
Switching Memory

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

2017 ◽  
Vol 3 (7) ◽  
pp. 1700152 ◽  
Author(s):  
Kyung Jean Yoon ◽  
Gun Hwan Kim ◽  
Sijung Yoo ◽  
Woorham Bae ◽  
Jung Ho Yoon ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Rectification Ratio ◽  
Resistive Switching Memory ◽  
Crossbar Array ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory
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