Smart Wide‐Bandgap Omnidirectional Reflector as an Effective Hole‐Injection Electrode for Deep‐UV Light‐Emitting Diodes

2019 ◽  
Vol 8 (2) ◽  
pp. 1901430 ◽  
Author(s):  
Tae Ho Lee ◽  
Tae Hoon Park ◽  
Hee Woong Shin ◽  
Noritoshi Maeda ◽  
Masafumi Jo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Wide Bandgap ◽  
Hole Injection ◽  
Light Emitting ◽  
Deep Uv

Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Density ◽  
Light Emitting ◽  
Deep Uv

Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

2007 ◽  
Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
Author(s):  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Organic Hydride ◽  
Metal Organic ◽  
Deep Uv

Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes

2006 ◽  
Vol 45 (No. 12) ◽  
pp. L352-L354 ◽  
Author(s):  
Shuai Wu ◽  
Sameer Chhajed ◽  
Li Yan ◽  
Wenhong Sun ◽  
Maxim Shatalov ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Deep Uv

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

2007 ◽  
Vol 19 (8-9) ◽  
pp. 764-769 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Gas Source ◽  
Deep Uv

Localized Surface Plasmon-Enhanced Deep-UV Light-Emitting Diodes with Al/Al2O3 Asymmetrical Nanoparticles

Plasmonics ◽  
2016 ◽  
Vol 12 (3) ◽  
pp. 843-848 ◽  
Author(s):  
Jin Wang ◽  
Guofeng Yang ◽  
Qing Zhang ◽  
Shumei Gao ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Localized Surface Plasmon ◽  
Light Emitting ◽  
Deep Uv

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Injection ◽  
Light Emitting ◽  
Si Substrates ◽  
Electron Confinement ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Electroluminescence Emission

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

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