Conductive Oxide Interfaces for Field Effect Devices

2019 ◽  
Vol 6 (15) ◽  
pp. 1900480 ◽  
Author(s):  
Lior Kornblum
Keyword(s):  
Field Effect ◽  
Oxide Interfaces ◽  
Conductive Oxide ◽  
Field Effect Devices

INDUCED MAGNETISM AT OXIDE INTERFACES

2013 ◽  
Vol 27 (19) ◽  
pp. 1330013 ◽  
Author(s):  
JACOBO SANTAMARIA ◽  
JAVIER GARCIA-BARRIOCANAL ◽  
ZOUHAIR SEFRIOUI ◽  
CARLOS LEON
Keyword(s):  
Magnetic Material ◽  
Field Effect ◽  
Ground States ◽  
Electron Correlations ◽  
Oxide Interfaces ◽  
Field Effect Devices ◽  
Low Dimensional ◽  
Electronic Ground

Interfaces between correlated oxides are attracting great interest. Electron correlations give rise to novel forms of couplings between electronic ground states at both sides of the interface. The bonding discontinuity at the interface between magnetic and nonmagnetic oxides is at the origin of a form of low dimensional magnetism in the otherwise nonmagnetic material. Its origin is the splitting of its bands due to the hybridization with the exchange split bands of the magnetic material. This induced magnetism could find interesting functionalities in devices with operation controlled by the interface such as tunnel or field effect devices of interest in spintronics.

scholarly journals Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

2016 ◽  
Vol 168 ◽  
pp. 514-517 ◽  
Author(s):  
A. Poghossian ◽  
T.S. Bronder ◽  
S. Scheja ◽  
C. Wu ◽  
T. Weinand ◽  
...  
Keyword(s):  
Field Effect ◽  
Dna Amplification ◽  
Label Free ◽  
Field Effect Devices

Mos digital‐to‐analog converter employing scaled field effect devices

1981 ◽  
Vol 69 (3) ◽  
pp. 889-889
Author(s):  
Ajay K. Puri ◽  
Michael J. Caruso ◽  
Stanley M. Dennison ◽  
Jay Brown
Keyword(s):  
Field Effect ◽  
Digital To Analog Converter ◽  
Analog Converter ◽  
Field Effect Devices ◽  
Digital To Analog

Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

1980 ◽  
Vol 58 (1) ◽  
pp. K51-K54 ◽  
Author(s):  
D. Roy Choudhury ◽  
A. K. Chowdhury ◽  
A. N. Chakravarti ◽  
B. R. Nag
Keyword(s):  
Field Effect ◽  
Magnetic Quantization ◽  
Field Effect Devices

Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

2013 ◽  
Vol 102 (18) ◽  
pp. 182104 ◽  
Author(s):  
Tae-il Kim ◽  
Yei Hwan Jung ◽  
Hyun-Joong Chung ◽  
Ki Jun Yu ◽  
Numair Ahmed ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Field Effect ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Field Effect Devices
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