The influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gates

1999 ◽  
Vol 86 (1) ◽  
pp. 657-663 ◽  
Author(s):  
M. Johansson ◽  
L.-G. Ekedahl ◽  
I. Lundström
Keyword(s):  
Mass Transport ◽  
Field Effect ◽  
Gas Mixtures ◽  
Transport Processes ◽  
Large Area ◽  
Metal Gates ◽  
Field Effect Devices ◽  
Catalytic Metal

Oxide and nitride encapsulation of large-area graphene field effect devices

2012 ◽  
Vol 520 (24) ◽  
pp. 7041-7043 ◽  
Author(s):  
Shahriar Al Imam ◽  
Abdelaadim Guermoune ◽  
Mohamed Siaj ◽  
Thomas Szkopek
Keyword(s):  
Field Effect ◽  
Large Area ◽  
Field Effect Devices

Gas sensors based on catalytic metal-gate field-effect devices

1986 ◽  
Vol 10 (3-4) ◽  
pp. 399-421 ◽  
Author(s):  
Ingemar Lundström ◽  
Mårten Armgarth ◽  
Anita Spetz ◽  
Fredrik Winquist
Keyword(s):  
Gas Sensors ◽  
Field Effect ◽  
Metal Gate ◽  
Field Effect Devices ◽  
Catalytic Metal

Evidence of late and postglacial seismic activity in the Témiscouata–Madawaska Valley, Quebec – New Brunswick, Canada

1992 ◽  
Vol 29 (5) ◽  
pp. 1043-1069 ◽  
Author(s):  
W. W. Shilts ◽  
M. Rappol ◽  
A. Blais
Keyword(s):  
Mass Transport ◽  
New Brunswick ◽  
Seismic Activity ◽  
Transport Processes ◽  
Laminated Sediments ◽  
Large Area ◽  
Close Proximity ◽  
Vertical Fault ◽  
Stratigraphic Position ◽  
Mass Flow Deposits

Three types of geological phenomena independently suggest that the Témiscouata–Madawaska Valley was affected by one or more seismic events following its deglaciation:(1) Subbottom acoustic profiling of Lac Témiscouata and Grand lac Squatec revealed disturbance of bottom sediments by mass transport processes in both lakes. Erosional truncation of preexisting, acoustically laminated sediments and accumulation of hummocky, chaotic deposits over older hummocky surfaces or laminated sequences both result from mass transport processes. Unidirectional mass flows from several points in these symmetrical basins, in situ disruption of laminated sediment beneath flat bottoms, and the large area of the lake floors affected suggest strong similarities in sedimentation style with lakes that have been disturbed during strong earthquakes.(2) Southeast of Lac Témiscouata, in Saint-Jacques, New Brunswick, two separate mass flow deposits, made up largely of coarse (> 0.5 m), angular boulders of local bedrock, occur on opposite sides of the Madawaska River valley. These deposits have different source areas and transport directions, but occupy more or less the same stratigraphic position within sediments deposited in glacial Lake Madawaska.(3) At one site in Saint-Jacques, a near-vertical fault displaces a glacially striated bedrock surface at least 7 cm, suggesting a response to postglacial compressive stress similar to that observed on outcrops in the nearby epicentral region of the 1982 Miramichi earthquake.Although the Témiscouata–Madawaska Valley lacks historical evidence of seismic activity, and many of the phenomena observed could, individually, have been generated by aseismic processes, we conclude that the close proximity of diverse features related to mass transport and faulting suggest that the valley has been the locus of seismic activity from the time of its deglaciation to the recent, but prehistorical, past.

High Temperature Reliability of SiC n-MOS Devices up to 630 °C

2006 ◽  
Vol 527-529 ◽  
pp. 1039-1042 ◽  
Author(s):  
Ruby N. Ghosh ◽  
Reza Loloee ◽  
Tamara Isaacs-Smith ◽  
John R. Williams
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Leakage ◽  
Large Area ◽  
Oxide Breakdown ◽  
Sensing Applications ◽  
Mos Devices ◽  
Field Effect Devices ◽  
Stress Cycling

SiC based field-effect devices are attractive for electronic and sensing applications above 250 °C. At these temperatures the reliability of the insulating dielectric in metal-oxidesemiconductor (MOS) structures becomes an important parameter in terms of long-term device performance. We report on the reliability of n-MOS SiC capacitors following thermal stress cycling in the 330 to 630 °C range. As the primary mode of oxide breakdown under these conditions is believed to be due to electron injection from the substrate, the gate leakage current was measured as a function of temperature. The gate dielectric was grown using dry oxidation with a post oxidation NO passivation anneal. For large area, 1 mm diameter, 6H-SiC capacitors we obtain current densities as low as 5nA/cm2 at 630 °C. In addition, gate leakage measurements from arrays of 300 to 1000 2m diameter devices fabricated on different 1cm2 6H-SiC substrates are presented. These are encouraging results for the long-term reliability of SiC field-effect sensors.

scholarly journals Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Rajabali ◽  
H. Asgharyan ◽  
V. Fadaei Naeini ◽  
A. Boudaghi ◽  
B. Zabihi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Dynamics ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogen Plasma ◽  
Device Fabrication ◽  
Dynamics Simulation ◽  
Red Phosphorus ◽  
Large Area ◽  
Low Concentration

AbstractLow concentration phosphorene-based sensors have been fabricated using a facile and ultra-fast process which is based on an exfoliation-free sequential hydrogen plasma treatment to convert the amorphous phosphorus thin film into mono- or few-layered phosphorene sheets. These sheets have been realized directly on silicon substrates followed by the fabrication of field-effect transistors showing the low leakage current and reasonable mobility for the nano-sensors. Being capable of covering the whole surface of the silicon substrate, red phosphorus (RP) coated substrate has been employed to achieve large area phosphorene sheets. Unlike the available techniques including mechanical exfoliation, there is no need for any exfoliation and/or transfer step which is significant progress in shortening the device fabrication procedure. These phosphorene sheets have been examined using transmission electron microscopy (TEM), Scanning electron microscopy (SEM), Raman spectroscopy and atomic-force microscopy (AFM). Electrical output in different states of the crystallization as well as its correlation with the test parameters have been also extensively used to examine the evolution of the phosphorene sheets. By utilizing the fabricated devices, the sensitivity of the phosphorene based-field effect transistors to the soluble L-Cysteine in low concentrations has been studied by measuring the FET response to the different concentrations. At a gate voltage of − 2.5 V, the range of 0.07 to 0.60 mg/ml of the L-Cysteine has been distinguishably detected presenting a gate-controlled sensor for a low-concentration solution. A reactive molecular dynamics simulation has been also performed to track the details of this plasma-based crystallization. The obtained results showed that the imparted energy from hydrogen plasma resulted in a phase transition from a system containing red phosphorus atoms to the crystal one. Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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