Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

2013 ◽  
Vol 102 (18) ◽  
pp. 182104 ◽  
Author(s):  
Tae-il Kim ◽  
Yei Hwan Jung ◽  
Hyun-Joong Chung ◽  
Ki Jun Yu ◽  
Numair Ahmed ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Field Effect ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Field Effect Devices

Fabrication of Releasable Single-Crystal Silicon-Metal Oxide Field-Effect Devices and Their Deterministic Assembly on Foreign Substrates

2011 ◽  
Vol 21 (16) ◽  
pp. 3029-3036 ◽  
Author(s):  
Hyun-Joong Chung ◽  
Tae-il Kim ◽  
Hoon-Sik Kim ◽  
Spencer A. Wells ◽  
Sungjin Jo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Field Effect ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Field Effect Devices

Epitaxial ZnS/Si core–shell nanowires and single-crystal silicon tube field-effect transistors

2008 ◽  
Vol 310 (1) ◽  
pp. 165-170 ◽  
Author(s):  
Z.H. Chen ◽  
H. Tang ◽  
X. Fan ◽  
J.S. Jie ◽  
C.S. Lee ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Crystal Silicon ◽  
Core Shell ◽  
Crystal Silicon ◽  
Silicon Tube ◽  
Shell Nanowires

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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