Reliable Work Function Determination of Multicomponent Surfaces and Interfaces: The Role of Electrostatic Potentials in Ultraviolet Photoelectron Spectroscopy

2017 ◽  
Vol 4 (19) ◽  
pp. 1700324 ◽  
Author(s):  
Thorsten Schultz ◽  
Thomas Lenz ◽  
Naresh Kotadiya ◽  
Georg Heimel ◽  
Gunnar Glasser ◽  
...  
Keyword(s):  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Electrostatic Potentials ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surfaces And Interfaces

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

Built-in Potential of a Pentacene Pin Homojunction Studied by Ultraviolet Photoemission Spectroscopy

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo
Keyword(s):  
Small Molecules ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Organic P ◽  
Band Bending ◽  
Silver Substrate ◽  
N Doping ◽  
Ultraviolet Photoemission Spectroscopy

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.

The Physical Properties of Ge Clusters and Ultrathin Films

1990 ◽  
Vol 206 ◽  
Author(s):  
R. Q. Yu ◽  
J. Fortner ◽  
S. J. Chase ◽  
J. S. Lannin
Keyword(s):  
Physical Properties ◽  
Ultrathin Films ◽  
Photoelectron Spectroscopy ◽  
Short Range ◽  
Large Fraction ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Densities Of States ◽  
Before And After ◽  
Electronic Densities

ABSTRACTRaman scattering and ultraviolet photoelectron spectroscopy on Ge clusters and ultrathin films before and after H chemisorption reveal the significant changes in the vibrational and electronic densities of states with size. These effects are attributed to the large fraction of surface dangling bonds and the important role of short range order changes on physical properties.

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