scholarly journals Oxidation-Induced Changes of Work Function and Interfacial Electronic States on Si(001) Surfaces Studied by Real-Time Ultraviolet Photoelectron Spectroscopy

Shinku ◽  
2006 ◽  
Vol 49 (5) ◽  
pp. 327-330 ◽  
Author(s):  
Shuichi OGAWA ◽  
Yuji TAKAKUWA
Keyword(s):  
Work Function ◽  
Real Time ◽  
Photoelectron Spectroscopy ◽  
Electronic States ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Induced Changes

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

Built-in Potential of a Pentacene Pin Homojunction Studied by Ultraviolet Photoemission Spectroscopy

2010 ◽  
Vol 1270 ◽  
Author(s):  
Selina Olthof ◽  
Hans Kleemann ◽  
Björn Lüssem ◽  
Karl Leo
Keyword(s):  
Small Molecules ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Organic P ◽  
Band Bending ◽  
Silver Substrate ◽  
N Doping ◽  
Ultraviolet Photoemission Spectroscopy

AbstractIn this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.

NEW ELECTRONIC STATES ON CLEAN Si(110)-“16×2” SURFACES

1995 ◽  
Vol 02 (05) ◽  
pp. 573-577 ◽  
Author(s):  
A. CRICENTI ◽  
B. NESTERENKO ◽  
P. PERFETTI ◽  
G. LE LAY ◽  
C. SEBENNE
Keyword(s):  
Electronic Properties ◽  
Brillouin Zone ◽  
Photoelectron Spectroscopy ◽  
Structural Model ◽  
Electronic States ◽  
Surface States ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Brillouin Zone ◽  
Differential Reflectivity

The electronic properties of a clean Si (110)-“16×2” surface have been studied by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ~ 1.8, 2.4, and 2.9 eV. The results are explained on the basis of a new structural model of the Si (110)-“16×2” phase.

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