Numerical Simulations and In Situ Optical Microscopy Connecting Flow Pattern, Crystallization, and Thin‐Film Properties for Organic Transistors with Superior Device‐to‐Device Uniformity

2020 ◽  
Vol 32 (48) ◽  
pp. 2004864
Author(s):  
Jeong‐Chan Lee ◽  
Minho Lee ◽  
Ho‐Jun Lee ◽  
Kwangguk Ahn ◽  
Jaewook Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Numerical Simulations ◽  
Optical Microscopy ◽  
Flow Pattern ◽  
Organic Transistors ◽  
Film Properties ◽  
Device To Device

scholarly journals Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

ACS Omega ◽  
2019 ◽  
Vol 4 (6) ◽  
pp. 10985-10990 ◽  
Author(s):  
Xiaxia Liao ◽  
Ah Reum Jeong ◽  
Regan G. Wilks ◽  
Sven Wiesner ◽  
Marin Rusu ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Properties ◽  
X Ray

Observing Interfacial Sliding Processes in Solid–Solid Contacts

MRS Bulletin ◽  
2008 ◽  
Vol 33 (12) ◽  
pp. 1159-1167 ◽  
Author(s):  
Kathryn J. Wahl ◽  
W. Gregory Sawyer
Keyword(s):  
Thin Film ◽  
Optical Microscopy ◽  
Friction And Wear ◽  
Solid Lubricants ◽  
Solid Lubrication ◽  
Low Friction ◽  
Interfacial Sliding ◽  
Moving Contact ◽  
Powerful Approach

AbstractDirectly seeing into a moving contact is a powerful approach to understanding how solid lubricants develop low-friction, long-lived interfaces. In this article, we present optical microscopy and spectroscopy approaches that can be integrated with friction monitoring instrumentation to provide real-time, in situ evaluation of solid lubrication phenomena. Importantly, these tools allow direct correlation of common tribological events (such as variations in friction and wear) with the responsible sliding-induced mechanical and chemical phenomena. We demonstrate the utility of in situ approaches with applications to a variety of thin-film solid lubricants.

Kinetics of Photodeposition of Superconducting Films

1992 ◽  
Vol 285 ◽  
Author(s):  
C. H. Chen ◽  
R. C. Phillips ◽  
P. W. Morrison
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Real Time ◽  
Superconducting Films ◽  
In Situ Monitoring ◽  
Superconducting Film ◽  
Film Properties ◽  
Laser Ablation Process ◽  
Kinetics Of

ABSTRACTKinetics of photodeposition of superconducting films was studied by using real time in-situ monitoring of gas phase species with mass spectrometry and thin-film properties by Fourier Transform Infrared (FTIR) spectrometry. A mass spectrometer was used to study wavelength and power dependent desorbed atoms and molecules during laser ablation process. FTIR was used to monitor the surface properties of thin film. Real time surface temperatures can be easily obtained by FTIR. By combinging mass spectrometry and FTIR, an optimum condition of making high-quality superconducting film can possibly be found.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

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