Van der Waals Epitaxial Growth of Mosaic‐Like 2D Platinum Ditelluride Layers for Room‐Temperature Mid‐Infrared Photodetection up to 10.6 µm

2020 ◽  
Vol 32 (52) ◽  
pp. 2004412
Author(s):  
Longhui Zeng ◽  
Di Wu ◽  
Jiansheng Jie ◽  
Xiaoyan Ren ◽  
Xin Hu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Van Der Waals ◽  
Mid Infrared ◽  
Infrared Photodetection

scholarly journals Mid infrared polarization engineering via sub-wavelength biaxial hyperbolic van der Waals crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar
Keyword(s):  
Room Temperature ◽  
Extinction Ratio ◽  
Polarization State ◽  
Van Der Waals ◽  
Photonic Devices ◽  
Mid Infrared ◽  
Precise Control ◽  
Electromagnetic Simulations ◽  
Frequency Regime ◽  
Sub Wavelength

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .

Graphene-Ta2O5 Heterostructure Enabled High Performance, Deep-Ultraviolet to Mid-Infrared Photodetection

Nanoscale ◽  
2021 ◽  
Author(s):  
Vinh Ho ◽  
Yifei Wang ◽  
Michael Cooney ◽  
Nguyen Q Vinh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Infrared Region ◽  
Temperature Sensitive ◽  
Mid Infrared ◽  
Significant Challenge ◽  
Deep Ultraviolet ◽  
Infrared Photodetection

Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic operation...

Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene–Bi2Se3 Heterostructure

ACS Photonics ◽  
2017 ◽  
Vol 4 (3) ◽  
pp. 482-488 ◽  
Author(s):  
Jaeseok Kim ◽  
Sungjoon Park ◽  
Houk Jang ◽  
Nikesh Koirala ◽  
Jae-Bok Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Mid Infrared ◽  
Highly Sensitive ◽  
Infrared Photodetection

scholarly journals InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

2018 ◽  
Vol 53 (18) ◽  
pp. 13010-13017 ◽  
Author(s):  
Jinchao Tong ◽  
Landobasa Y. M. Tobing ◽  
Li Qian ◽  
Fei Suo ◽  
Dao Hua Zhang
Keyword(s):  
Room Temperature ◽  
Mid Infrared ◽  
Infrared Photodetection

Scalable Van der Waals Two-Dimensional PtTe2 Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection

2021 ◽  
Author(s):  
Mashiyat Sumaiya Shawkat ◽  
Shihab Bin Hafiz ◽  
Molla Manjurul Islam ◽  
Sohrab Alex Mofid ◽  
Mohammad M. Al Mahfuz ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Two Dimensional ◽  
Mid Infrared ◽  
Infrared Photodetection

scholarly journals Mid-infrared Photodetection Using Cyclotron Resonance in Graphene/h-BN van der Waals Heterostructures

2019 ◽  
Vol 31 (7) ◽  
pp. 2281 ◽  
Author(s):  
Momoko Onodera ◽  
Kei Kinoshita ◽  
Rai Moriya ◽  
Satoru Masubuchi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Mid Infrared ◽  
Infrared Photodetection

Progress on GaInAsSb And InAsSbP Photodetectors for MiD-Infrared Wavelengths

1997 ◽  
Vol 484 ◽  
Author(s):  
Z. A. Shellenbarger ◽  
M. G. Mauk ◽  
P. E. Sims ◽  
J. A. Cox ◽  
J. D. Lesko ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Wavelength Range ◽  
Room Temperature ◽  
Avalanche Photodiodes ◽  
Avalanche Photodiode ◽  
Avalanche Multiplication ◽  
Mid Infrared ◽  
Infrared Wavelengths ◽  
Liquid Phase Epitaxial Growth

AbstractProgress on mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGaAsSb on GaSb and InAs substrates is reported. GaInAsSb p/n and p-i-n detectors, InAsSbP p/n detectors and AlGaAsSb/GaInAsSb avalanche photodiode (APD) structures were fabricated. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3.μm and 2.8. μm respectively. Room temperature background noiselimited detectivity (D*BLIP) of 4 × 1010 cmHz1/2/W for GaInAsSb detectors and 4 × 108 cmHz1/2/W for InAsSbP was measured. Room-temperature avalanche multiplication gain of 20 was measured on AlGaAsSb/GaInAsSb avalanche photodiodes.

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