scholarly journals 2D Materials: Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems (Adv. Mater. 12/2019)

2019 ◽  
Vol 31 (12) ◽  
pp. 1970088 ◽  
Author(s):  
Xin Chen ◽  
He Yang ◽  
Bin Wu ◽  
Lifeng Wang ◽  
Qiang Fu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
2D Materials ◽  
Material Systems ◽  
Graphene Material

Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems

2019 ◽  
Vol 31 (12) ◽  
pp. 1805582 ◽  
Author(s):  
Xin Chen ◽  
He Yang ◽  
Bin Wu ◽  
Lifeng Wang ◽  
Qiang Fu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Material Systems ◽  
Graphene Material

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

Epitaxial growth of large-scale In2S3 nanoflakes and the construction of a high performance In2S3/Si photodetector

2019 ◽  
Vol 7 (39) ◽  
pp. 12104-12113 ◽  
Author(s):  
Jianting Lu ◽  
Zhaoqiang Zheng ◽  
Wei Gao ◽  
Jiandong Yao ◽  
Yu Zhao ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Material Properties ◽  
High Performance ◽  
Large Scale ◽  
2D Materials

MoS2-like layered 2D materials have attracted attention worldwide due to their intriguing material properties.

Epitaxial Growth of Main Group Monoelemental 2D Materials

2020 ◽  
pp. 2006997
Author(s):  
Dechun Zhou ◽  
Heping Li ◽  
Nan Si ◽  
Hui Li ◽  
Harald Fuchs ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
2D Materials ◽  
Main Group

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

2018 ◽  
Vol 47 (16) ◽  
pp. 6073-6100 ◽  
Author(s):  
Geng Li ◽  
Yu-Yang Zhang ◽  
Hui Guo ◽  
Li Huang ◽  
Hongliang Lu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
2D Materials ◽  
Recent Advances ◽  
Binary Compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.

scholarly journals The epitaxy of 2D materials growth

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jichen Dong ◽  
Leining Zhang ◽  
Xinyue Dai ◽  
Feng Ding
Keyword(s):  
Epitaxial Growth ◽  
Density Functional ◽  
Large Scale ◽  
Film Growth ◽  
2D Materials ◽  
Critical Role ◽  
High Symmetry ◽  
Perfect Agreement ◽  
Symmetry Direction ◽  
2D Material

AbstractTwo dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth. Here, we proposed a general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that orientational uniformity of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experimental observations on 2D materials’ growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

scholarly journals Deterministic synthesis of Cu9S5 flakes assisted by single-layer graphene arrays

2021 ◽  
Author(s):  
A. Portone ◽  
L. Bellucci ◽  
D. Convertino ◽  
F. Mezzadri ◽  
G. Piccinini ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Lattice Constant ◽  
2D Materials ◽  
Single Layer ◽  
Layered Materials ◽  
Buffer Layers ◽  
Single Layer Graphene ◽  
Crystalline Orientation ◽  
Layer Graphene ◽  
Large Lattice

The employment of 2D materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch.

scholarly journals The Epitaxy of 2D materials growth

2020 ◽  
Author(s):  
Jichen Dong ◽  
Feng Ding
Keyword(s):  
Epitaxial Growth ◽  
Density Functional ◽  
Large Scale ◽  
2D Materials ◽  
Critical Role ◽  
High Symmetry ◽  
Perfect Agreement ◽  
Symmetry Direction ◽  
2D Material ◽  
High Symmetry Direction

Abstract A general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate was proposed. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that unidirectional align-ment of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experi-mental observations on 2D materials’ growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

scholarly journals Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer

2019 ◽  
Vol 5 (1) ◽  
pp. eaau6120 ◽  
Author(s):  
Qizhong Zhu ◽  
Matisse Wei-Yuan Tu ◽  
Qingjun Tong ◽  
Wang Yao
Keyword(s):  
Coulomb Interaction ◽  
Quantum Tunneling ◽  
2D Materials ◽  
Van Der Waals ◽  
Quantum Spin ◽  
Two Dimensional ◽  
Quantum Phases ◽  
Powerful Approach ◽  
Material Systems ◽  
Topological Matter

Van der Waals heterostructures of two-dimensional (2D) materials provide a powerful approach toward engineering various quantum phases of matter. Examples include topological matter such as quantum spin Hall (QSH) insulator and correlated matter such as exciton superfluid. It can be of great interest to realize these vastly different quantum phases matter on a common platform; however, their distinct origins tend to restrict them to material systems of incompatible characters. Here, we show that heterobilayers of 2D valley semiconductors can be tuned through interlayer bias between an exciton superfluid, a quantum anomalous Hall insulator, and a QSH insulator. The tunability between these distinct phases results from the competition of Coulomb interaction with the interlayer quantum tunneling that has a chiral form in valley semiconductors. Our findings point to exciting opportunities for harnessing both protected topological edge channels and bulk superfluidity in an electrically configurable platform.

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