Epitaxial Growth of Main Group Monoelemental 2D Materials

2020 ◽  
pp. 2006997
Author(s):  
Dechun Zhou ◽  
Heping Li ◽  
Nan Si ◽  
Hui Li ◽  
Harald Fuchs ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
2D Materials ◽  
Main Group

To Bend or Not to Bend, the Dilemma of Multiple Bonds

2019 ◽  
Author(s):  
Michele Pizzocchero ◽  
Matteo Bonfanti ◽  
Rocco Martinazzo
Keyword(s):  
First Principles ◽  
2D Materials ◽  
Main Group ◽  
First Principles Calculations ◽  
Group 14 ◽  
Multiple Bonds ◽  
Main Group Elements ◽  
Structural Distortions

The manuscript addresses the issue of the structural distortions occurring at multiple bonds between high main group elements, focusing on group 14. These distortions are known as trans-bending in silenes, disilenes and higher group analogues, and buckling in 2D materials likes silicene and germanene. A simple but correlated \sigma + \pi model is developed and validated with first-principles calculations, and used to explain the different behaviour of second- and higher- row elements.

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

scholarly journals 2D Materials: Epitaxial Growth of h‐BN on Templates of Various Dimensionalities in h‐BN–Graphene Material Systems (Adv. Mater. 12/2019)

2019 ◽  
Vol 31 (12) ◽  
pp. 1970088 ◽  
Author(s):  
Xin Chen ◽  
He Yang ◽  
Bin Wu ◽  
Lifeng Wang ◽  
Qiang Fu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
2D Materials ◽  
Material Systems ◽  
Graphene Material

Epitaxial growth of large-scale In2S3 nanoflakes and the construction of a high performance In2S3/Si photodetector

2019 ◽  
Vol 7 (39) ◽  
pp. 12104-12113 ◽  
Author(s):  
Jianting Lu ◽  
Zhaoqiang Zheng ◽  
Wei Gao ◽  
Jiandong Yao ◽  
Yu Zhao ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Material Properties ◽  
High Performance ◽  
Large Scale ◽  
2D Materials

MoS2-like layered 2D materials have attracted attention worldwide due to their intriguing material properties.

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

2018 ◽  
Vol 47 (16) ◽  
pp. 6073-6100 ◽  
Author(s):  
Geng Li ◽  
Yu-Yang Zhang ◽  
Hui Guo ◽  
Li Huang ◽  
Hongliang Lu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
2D Materials ◽  
Recent Advances ◽  
Binary Compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.

scholarly journals 2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

2020 ◽  
Vol 30 (40) ◽  
pp. 2001127 ◽  
Author(s):  
Ziyang Lu ◽  
Guru Prakash Neupane ◽  
Guohua Jia ◽  
Haitao Zhao ◽  
Dongchen Qi ◽  
...  
Keyword(s):  
2D Materials ◽  
Main Group ◽  
Group Element ◽  
Main Group Element

scholarly journals The epitaxy of 2D materials growth

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jichen Dong ◽  
Leining Zhang ◽  
Xinyue Dai ◽  
Feng Ding
Keyword(s):  
Epitaxial Growth ◽  
Density Functional ◽  
Large Scale ◽  
Film Growth ◽  
2D Materials ◽  
Critical Role ◽  
High Symmetry ◽  
Perfect Agreement ◽  
Symmetry Direction ◽  
2D Material

AbstractTwo dimensional (2D) materials consist of one to a few atomic layers, where the intra-layer atoms are chemically bonded and the atomic layers are weakly bonded. The high bonding anisotropicity in 2D materials make their growth on a substrate substantially different from the conventional thin film growth. Here, we proposed a general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that orientational uniformity of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experimental observations on 2D materials’ growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

scholarly journals Deterministic synthesis of Cu9S5 flakes assisted by single-layer graphene arrays

2021 ◽  
Author(s):  
A. Portone ◽  
L. Bellucci ◽  
D. Convertino ◽  
F. Mezzadri ◽  
G. Piccinini ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Lattice Constant ◽  
2D Materials ◽  
Single Layer ◽  
Layered Materials ◽  
Buffer Layers ◽  
Single Layer Graphene ◽  
Crystalline Orientation ◽  
Layer Graphene ◽  
Large Lattice

The employment of 2D materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch.

scholarly journals The Epitaxy of 2D materials growth

2020 ◽  
Author(s):  
Jichen Dong ◽  
Feng Ding
Keyword(s):  
Epitaxial Growth ◽  
Density Functional ◽  
Large Scale ◽  
2D Materials ◽  
Critical Role ◽  
High Symmetry ◽  
Perfect Agreement ◽  
Symmetry Direction ◽  
2D Material ◽  
High Symmetry Direction

Abstract A general theoretical framework for the epitaxial growth of a 2D material on an arbitrary substrate was proposed. Our extensive density functional theory (DFT) calculations show that the propagating edge of a 2D material tends to align along a high symmetry direction of the substrate and, as a conclusion, the interplay between the symmetries of the 2D material and the substrate plays a critical role in the epitaxial growth of the 2D material. Based on our results, we have outlined that unidirectional align-ment of 2D material islands on a substrate can be realized only if the symmetry group of the substrate is a subgroup of that of the 2D material. Our predictions are in perfect agreement with most experi-mental observations on 2D materials’ growth on various substrates known up to now. We believe that this general guideline will lead to the large-scale synthesis of wafer-scale single crystals of various 2D materials in the near future.

scholarly journals Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table

2021 ◽  
Author(s):  
Peter Hess
Keyword(s):  
Bond Length ◽  
Ultimate Strength ◽  
Periodic Table ◽  
Predictive Power ◽  
Mechanical Stability ◽  
2D Materials ◽  
Covalent Bonding ◽  
Main Group ◽  
Main Group Elements ◽  
Bonding Structure

Inverse dependence of 2D covalent bonding on bond length of elemental and isoelectronic binary monolayers of the main group elements II–VI. This behavior is also observed for the Young's modulus and ultimate strength.

Sign in / Sign up

Export Citation Format

Share Document