scholarly journals Pulsed Lasers: An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide (Adv. Mater. 31/2018)

2018 ◽  
Vol 30 (31) ◽  
pp. 1870233 ◽  
Author(s):  
Xiangling Tian ◽  
Hongyu Luo ◽  
Rongfei Wei ◽  
Chunhui Zhu ◽  
Qianyi Guo ◽  
...  
2018 ◽  
Vol 30 (31) ◽  
pp. 1801021 ◽  
Author(s):  
Xiangling Tian ◽  
Hongyu Luo ◽  
Rongfei Wei ◽  
Chunhui Zhu ◽  
Qianyi Guo ◽  
...  

1997 ◽  
Vol 28 (10) ◽  
pp. 853-865
Author(s):  
Ralf Brinkmann ◽  
Gerit Dröge ◽  
Frank Schröer ◽  
Manfred Scheu ◽  
Reginald Birngruber

Sensors ◽  
2018 ◽  
Vol 19 (1) ◽  
pp. 89 ◽  
Author(s):  
Ming Cai ◽  
Shulong Wang ◽  
Bo Gao ◽  
Yindi Wang ◽  
Tao Han ◽  
...  

In this paper, a new electro-optical switch modulator based on the surface plasmon polaritons of graphene is proposed. An air–graphene-substrate–dielectric structure is adopted in the modulator. In this structure, the graphene is considered as a film of metal whose thickness tends to be infinitesimal. By changing the external voltage, the boundary conditions can be changed to decide whether the surface plasmon polariton waves can be excited in mid-infrared band. Because of this effect, the structure can be used as an electro–optical switch modulator, whose modulation depth is about 100% in theory. Finally, the 3 dB bandwidth (~34 GHz) and the energy loss (36.47 fJ/bit) of the electro–optical switch modulator are given, whose low energy loss is very suitable for engineering applications.


2017 ◽  
Vol 29 (27) ◽  
pp. 1700754 ◽  
Author(s):  
Qiangbing Guo ◽  
Yudong Cui ◽  
Yunhua Yao ◽  
Yuting Ye ◽  
Yue Yang ◽  
...  

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Chunhui Zhu ◽  
Fengqiu Wang ◽  
Yafei Meng ◽  
Xiang Yuan ◽  
Faxian Xiu ◽  
...  

2010 ◽  
Vol 18 (25) ◽  
pp. 26744 ◽  
Author(s):  
Candice Tsay ◽  
Yunlai Zha ◽  
Craig B. Arnold

2010 ◽  
Vol 18 (15) ◽  
pp. 15523 ◽  
Author(s):  
Candice Tsay ◽  
Elvis Mujagić ◽  
Christi K. Madsen ◽  
Claire F. Gmachl ◽  
Craig B. Arnold

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiening Jin ◽  
Junchao Zhou ◽  
Pao Tai Lin

Abstract Tunable photonic circuits were demonstrated in the mid-Infrared (mid-IR) regime using integrated TiO2-on-LiNbO3 (ToL) waveguides. The upper waveguide ridge was made by a sputtered TiO2 thin film with broad transparency at λ = 0.4–8 µm and an optimized refractive index n = 2.39. The waveguide substrate is a z-cut single crystalline LiNbO3 (LN) wafer that has strong Pockels effect, thus enabling the tunability of the device through electro-optical (E-O) modulation. A sharp waveguide mode was obtained at λ = 2.5 µm without scattering or mode distortion found. The measured E-O coefficient γeff was 5.9 pm/V approaching γ31 of 8.6 pm/V of LN. The ToL waveguide showed a hybrid mode profile where its optical field can be modified by adjusting the TiO2 ridge height. Our monolithically integrated ToL modulator is an efficient and small footprint optical switch critical for the development of reconfigurable photonic chips.


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