Sm3+-doped bismuthate glasses and proton-implanted near-infrared waveguides

Sm[Formula: see text]-doped bismuthate glass has been synthesized by means of the classic melt-quenching technique. Its optical properties were characterized, which included refractive index, absorption and fluorescence spectra. The measured data suggest that the Sm[Formula: see text]-doped bismuthate glass is suitable for optoelectronic applications. A Sm[Formula: see text]-doped bismuthate glass waveguide operating at 1.539 [Formula: see text]m has been manufactured by using the proton implantation with a 0.4 MeV energy and a 8.0 × 10[Formula: see text] ions⋅cm[Formula: see text] fluence for the first time to our knowledge. The effective refractive indices of the propagation modes for the glass waveguide were obtained by the m-line technique. The energy loss caused by the collision of the irradiated protons and the nuclei of the target Sm[Formula: see text]-doped bismuthate glass was calculated by the SRIM 2013. The refractive index profile and the near-field guided mode distribution for the waveguide structure were fitted through the reflectivity calculation method (RCM) and the FD-BPM method, respectively. The proton-implanted Sm[Formula: see text]-doped bismuthate glass waveguide is an alternative for an integrated device in the telecommunication band.