An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide

2018 ◽  
Vol 30 (31) ◽  
pp. 1801021 ◽  
Author(s):  
Xiangling Tian ◽  
Hongyu Luo ◽  
Rongfei Wei ◽  
Chunhui Zhu ◽  
Qianyi Guo ◽  
...  
Keyword(s):  
Optical Switch ◽  
Solution Processed ◽  
Mid Infrared

scholarly journals Pulsed Lasers: An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide (Adv. Mater. 31/2018)

2018 ◽  
Vol 30 (31) ◽  
pp. 1870233 ◽  
Author(s):  
Xiangling Tian ◽  
Hongyu Luo ◽  
Rongfei Wei ◽  
Chunhui Zhu ◽  
Qianyi Guo ◽  
...  
Keyword(s):  
Optical Switch ◽  
Pulsed Lasers ◽  
Solution Processed ◽  
Mid Infrared

scholarly journals A New Electro-Optical Switch Modulator Based on the Surface Plasmon Polaritons of Graphene in Mid-Infrared Band

Sensors ◽  
2018 ◽  
Vol 19 (1) ◽  
pp. 89 ◽  
Author(s):  
Ming Cai ◽  
Shulong Wang ◽  
Bo Gao ◽  
Yindi Wang ◽  
Tao Han ◽  
...  
Keyword(s):  
Energy Loss ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Surface Plasmon Polariton ◽  
Modulation Depth ◽  
Optical Switch ◽  
Dielectric Structure ◽  
Infrared Band ◽  
Mid Infrared ◽  
Plasmon Polaritons

In this paper, a new electro-optical switch modulator based on the surface plasmon polaritons of graphene is proposed. An air–graphene-substrate–dielectric structure is adopted in the modulator. In this structure, the graphene is considered as a film of metal whose thickness tends to be infinitesimal. By changing the external voltage, the boundary conditions can be changed to decide whether the surface plasmon polariton waves can be excited in mid-infrared band. Because of this effect, the structure can be used as an electro–optical switch modulator, whose modulation depth is about 100% in theory. Finally, the 3 dB bandwidth (~34 GHz) and the energy loss (36.47 fJ/bit) of the electro–optical switch modulator are given, whose low energy loss is very suitable for engineering applications.

scholarly journals A Solution-Processed Ultrafast Optical Switch Based on a Nanostructured Epsilon-Near-Zero Medium

2017 ◽  
Vol 29 (27) ◽  
pp. 1700754 ◽  
Author(s):  
Qiangbing Guo ◽  
Yudong Cui ◽  
Yunhua Yao ◽  
Yuting Ye ◽  
Yue Yang ◽  
...  
Keyword(s):  
Optical Switch ◽  
Solution Processed ◽  
Ultrafast Optical ◽  
Epsilon Near Zero

scholarly journals A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Chunhui Zhu ◽  
Fengqiu Wang ◽  
Yafei Meng ◽  
Xiang Yuan ◽  
Faxian Xiu ◽  
...  
Keyword(s):  
Optical Switch ◽  
Dirac Fermions ◽  
Mid Infrared

scholarly journals Solution-processed chalcogenide glass for integrated single-mode mid-infrared waveguides

2010 ◽  
Vol 18 (25) ◽  
pp. 26744 ◽  
Author(s):  
Candice Tsay ◽  
Yunlai Zha ◽  
Craig B. Arnold
Keyword(s):  
Chalcogenide Glass ◽  
Single Mode ◽  
Solution Processed ◽  
Mid Infrared ◽  
Infrared Waveguides

scholarly journals Mid-infrared characterization of solution-processed As_2S_3 chalcogenide glass waveguides

2010 ◽  
Vol 18 (15) ◽  
pp. 15523 ◽  
Author(s):  
Candice Tsay ◽  
Elvis Mujagić ◽  
Christi K. Madsen ◽  
Claire F. Gmachl ◽  
Craig B. Arnold
Keyword(s):  
Chalcogenide Glass ◽  
Solution Processed ◽  
Mid Infrared ◽  
Glass Waveguides

scholarly journals Mid-Infrared Electro-Optical Modulation Using Monolithically Integrated Titanium Dioxide on Lithium Niobate Optical Waveguides

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tiening Jin ◽  
Junchao Zhou ◽  
Pao Tai Lin
Keyword(s):  
Optical Waveguides ◽  
Optical Switch ◽  
Optical Field ◽  
Optical Modulation ◽  
Pockels Effect ◽  
Hybrid Mode ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Ridge Height ◽  
Small Footprint

Abstract Tunable photonic circuits were demonstrated in the mid-Infrared (mid-IR) regime using integrated TiO2-on-LiNbO3 (ToL) waveguides. The upper waveguide ridge was made by a sputtered TiO2 thin film with broad transparency at λ = 0.4–8 µm and an optimized refractive index n = 2.39. The waveguide substrate is a z-cut single crystalline LiNbO3 (LN) wafer that has strong Pockels effect, thus enabling the tunability of the device through electro-optical (E-O) modulation. A sharp waveguide mode was obtained at λ = 2.5 µm without scattering or mode distortion found. The measured E-O coefficient γeff was 5.9 pm/V approaching γ31 of 8.6 pm/V of LN. The ToL waveguide showed a hybrid mode profile where its optical field can be modified by adjusting the TiO2 ridge height. Our monolithically integrated ToL modulator is an efficient and small footprint optical switch critical for the development of reconfigurable photonic chips.

Mid-infrared fiber grating optical switch of Ge20As20Se15Te45 chalcogenide glass

2017 ◽  
Vol 46 (7) ◽  
pp. 720002
Author(s):  
张 倩 Zhang Qian ◽  
张培晴 Zhang Peiqing ◽  
曾江辉 Zeng Jianghui ◽  
戴世勋 Dai Shixun ◽  
王训四 Wang Xunsi
Keyword(s):  
Chalcogenide Glass ◽  
Optical Switch ◽  
Fiber Grating ◽  
Mid Infrared
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