Interface‐Driven Partial Dislocation Formation in 2D Heterostructures

2019 ◽  
Vol 31 (15) ◽  
pp. 1807486 ◽  
Author(s):  
Jung Hwa Kim ◽  
Se‐Yang Kim ◽  
Yeonchoo Cho ◽  
Hyo Ju Park ◽  
Hyeon‐Jin Shin ◽  
...  
Keyword(s):  
Partial Dislocation ◽  
Dislocation Formation

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Suppression of dislocation formation in silicon by carbon implantation

1995 ◽  
Vol 67 (19) ◽  
pp. 2857-2859 ◽  
Author(s):  
T. W. Simpson ◽  
R. D. Goldberg ◽  
I. V. Mitchell
Keyword(s):  
Dislocation Formation

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

scholarly journals Shrinking stacking fault through glide of the Shockley partial dislocation in hard-sphere crystal under gravity

2007 ◽  
Vol 105 (10) ◽  
pp. 1377-1383 ◽  
Author(s):  
Atsushi Mori ◽  
Yoshihisa Suzuki ◽  
Shin-Ichiro Yanagiya ◽  
Tsutomu Sawada ◽  
Kensaku Ito
Keyword(s):  
Hard Sphere ◽  
Partial Dislocation ◽  
Stacking Fault ◽  
Shockley Partial Dislocation ◽  
Shockley Partial

Electronic structure of the unreconstructed 30° partial dislocation in silicon

1981 ◽  
Vol 24 (8) ◽  
pp. 4623-4628 ◽  
Author(s):  
John E. Northrup ◽  
Marvin L. Cohen ◽  
James R. Chelikowsky ◽  
J. Spence ◽  
A. Olsen
Keyword(s):  
Electronic Structure ◽  
Partial Dislocation

Deformation Twins Formed in Nanocrystalline Materials

2006 ◽  
Vol 503-504 ◽  
pp. 125-132 ◽  
Author(s):  
Yuntian T. Zhu
Keyword(s):  
Grain Boundaries ◽  
Nanocrystalline Materials ◽  
Partial Dislocation ◽  
Room Temperature ◽  
High Pressure Torsion ◽  
Nucleation And Growth ◽  
Analytical Models ◽  
Partial Dislocations ◽  
Deformation Twins ◽  
Low Strain Rate

Deformation twins have been oberved in nanocrystalline (NC) Al synthsized by cryogenic ball-milling and in NC Cu processed by high-pressure torsion under room temperature and at a very low strain rate. They were found formed by partial dislocations emitted from grain boundaries. This paper first reviews experimental evidences on deformation twinning and partial dislocation emissions from grain boundaries, and then discusses recent analytical models on the nucleation and growth of deformation twins. These models are compared with experimental results to establish their validity and limitations.

DISSOCIATED DISLOCATIONS AND THE SCHMID LAW OF RESOLVED SHEAR STRESS IN b.c.c. METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 939-943 ◽  
Author(s):  
F. R. N. Nabarro ◽  
T. R. Duncan
Keyword(s):  
Shear Stress ◽  
Partial Dislocation ◽  
Shear Stresses ◽  
Screw Dislocations ◽  
The Core

The dissociation of screw dislocations on [Formula: see text] planes in a b.c.c. metal can lead to unequal shear stresses for glide in opposite directions, while dissociation on [Formula: see text] planes cannot. Glide will occur in the former configuration only if the radius of the core of a partial dislocation exceeds [Formula: see text] of the radius of a symmetrically dissociated dislocation. If this condition is not satisfied, one partial dislocation runs to infinity before the remaining two coalesce.

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