scholarly journals Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I

2018 ◽  
Vol 30 (12) ◽  
pp. 1706573 ◽  
Author(s):  
Taehwan Jun ◽  
Junghwan Kim ◽  
Masato Sasase ◽  
Hideo Hosono
Keyword(s):  
Material Design ◽  
Amorphous Semiconductor ◽  
P Type

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

scholarly journals Material Design Inputs from Charge Density Analysis in Organic Semiconductors

2014 ◽  
Vol 70 (a1) ◽  
pp. C1552-C1552
Author(s):  
Venkatesha Hathwar ◽  
Mads Jørgensen ◽  
Mattia Sist ◽  
Jacob Overgaard ◽  
Bo Iversen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electron Density ◽  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Material Design ◽  
Detailed Comparison ◽  
Light Emitting ◽  
Density Analysis ◽  
P Type

In recent years, semiconducting organic materials have attracted a considerable amount of interest to develop all-organic or hybrid organic-inorganic electronic devices such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), or photovoltaic cells. Rubrene (5,6,11,12-tetraphenyltetracene, RUB) is one of the most explored compound in this area as it has nearly 100% fluorescence quantum efficiency in solution. Additionally, the OFET fabricated by vacuum-deposited using orthorhombic rubrene single crystals show p-type characteristics with high mobility up to 20cm2/Vs (Podzorov et al., 2004). The large charge-carrier mobilities measured have been attributed to the packing motif (Fig a) which provides enough spatial overlap of the π-conjugated tetracene backbone. In the same time, RUB undergoes an oxidation in the presence of light to form rubrene endoperoxide (RUB-OX) (Fumagalli et al., 2011). RUB-OX molecules show electronic and structural properties strikingly different from those of RUB, mainly due to the disruption in the conjugate stacking of tetracene moieties. The significant semiconducting property of RUB is not clear yet. In this context, high resolution single crystal X-ray data of RUB (Fig b) and RUB-OX have been collected at 100K. Owing to the presence of weak aromatic stacking and quadrupolar interactions, the neutron single crystal data is also collected at 100K. The C-H bond distances and scaled anisotropic displacement parameters (ADP) of hydrogens from the neutron experiment are used in the multipolar refinements of electron density. The chemical bonding features (Fig c), the topology of electron density and strength of weak interaction are calculated by the Atoms in Molecules (AIM) theory (Bader, 1990). It is further supported by the source function description and mapping of non-covalent interactions based on the electron density. The detailed comparison of two organic semiconductors, RUB and RUB-OX will be discussed.

Electronic Structures of P-Type Doped CuInS2

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshida
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Spherical Wave ◽  
Material Design ◽  
Electronic Band ◽  
Design Considerations ◽  
Band Structure Calculations ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

AbstractWe have studied the electronic structures of CuIn(S0.875X0.125)2 (X=B, C, N, Si or P) based on the ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We have clarified that the physical characteristics of the p-type doped CuInS2 crystals are mainly determined by a change in the strength of interactions between Cu and S atoms. On the basis of the calculated results, we discussed the material design considerations, such as controlling the strength of resistivity for p-type doped CulnS2 materials and converting the conduction type, from n-type to p-type by a codoping method.

Thermoelectric Material Design in Pseudo Binary Systems of Mg2Si – Mg2Ge – Mg2Sn on the Powder Metallurgy Route

2007 ◽  
Vol 534-536 ◽  
pp. 1553-1556
Author(s):  
Tatsuhiko Aizawa ◽  
Ren Bo Song ◽  
Atsushi Yamamoto
Keyword(s):  
Solid Solution ◽  
Chemical Composition ◽  
Binary Systems ◽  
Material Design ◽  
Germanium Content ◽  
Solution Type ◽  
Wide Range ◽  
P Type ◽  
Tin Content ◽  
Melting And Solidification

Fundamental studies on the thermoelectricity have been mainly done in the pseudo binary systems of Mg2Si – Mg2Ge – Mg2Sn. In recent years, their thermoelectricity is revisited because of light-weight, low initial const and short turning back time in addition to high potential in figureof- merit for ZT approaching to unity or more. Conventional melting and solidification, or, normal PM routes fail in precise, wide-range control of chemical composition and microstructure control. New PM route via bulk mechanical alloying is developed to fabricate the solid solution semiconductive materials with Mg2Si1-xGex and Mg2Si1-ySny for 0 < x, y < 1 and to investigate their thermoelectric materials. Since Mg2Si is n-type and both Mg2Ge and Mg2Sn are p-type, pntransition takes place at the specified range of germanium content, x, and tin content, y. Through optimization of chemical composition, solid-solution type thermoelectric semi-conductive materials are designed both for n- and p-type materials. In addition, appropriate doping condition can be searched in the specified range of x and y.

A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-511-C4-514
Author(s):  
Y. Sawan ◽  
M. El-Gabaly ◽  
F. Wakim ◽  
S. Atari
Keyword(s):  
Amorphous Semiconductor ◽  
Type Silicon ◽  
P Type
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