19-4: Late-News Paper: New P-type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2 /Vs for Next-Generation Displays

2018 ◽  
Vol 49 (1) ◽  
pp. 236-238
Author(s):  
Junghwan Kim ◽  
Taehwan Jun ◽  
Hideo Hosono
Keyword(s):  
High Mobility ◽  
Amorphous Semiconductor ◽  
Next Generation ◽  
High Transparency ◽  
Late News ◽  
P Type

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

LIGHT-INDUCED EXCESS CONDUCTIVITY AND THE ROLE OF ARGON IN THE DEPOSITION OF DOPING-MODULATED AMORPHOUS SILICON SUPERLATTICES.

1985 ◽  
Vol 56 ◽  
Author(s):  
F.-C. Su ◽  
S. Levine ◽  
P. E. Vanier ◽  
F. J. Kampas
Keyword(s):  
Amorphous Silicon ◽  
Amorphous Semiconductor ◽  
Excess Conductivity ◽  
The Novel ◽  
Semiconductor Superlattice ◽  
Deposition Parameters ◽  
Superlattice Structures ◽  
Argon Dilution ◽  
P Type

AbstractAmorphous semiconductor superlattice structures consisting of alternating n-type and p-type doped layers of hydrogenated amorphous silicon (a-Si:H) have been made by silane glow discharge in a single chamber system. These multilayered films show the novel phenomenon of light-induced excess conductivity (LEC) associated with a metastable state having a lifetime of order of days. This report shows that the LEC effect is quite dependent on the specific details of the deposition parameters, namely dilution of the silane with inert gas, substrate temperature and layer thickness. In order to investigate the origin of the LEC effect, argon dilution was used for specific regions of the structure. This experiment shows that the slow states are distributed throughout the layers, and are not concentrated at the interfaces.

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display

2021 ◽  
Vol 52 (S2) ◽  
pp. 395-398
Author(s):  
Yukiharu Uraoka ◽  
Takanori Takahashi ◽  
Mami Fujii ◽  
J.P. Bermundo ◽  
Ryoko Miyanaga ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Degradation Mechanism ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Next Generation ◽  
Paper Degradation

64.5L: Late-News Paper: A Clock Embedded Differential Signaling (CEDS™) for the Next Generation TFT-LCD Applications

2009 ◽  
Vol 40 (1) ◽  
pp. 975 ◽  
Author(s):  
Hyun-Kyu Jeon ◽  
Yong-Whan Moon ◽  
Jeong-II Seo ◽  
Joon-Ho Na ◽  
Hyung-Seog Oh ◽  
...  
Keyword(s):  
Next Generation ◽  
Differential Signaling ◽  
Late News

scholarly journals Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I

2018 ◽  
Vol 30 (12) ◽  
pp. 1706573 ◽  
Author(s):  
Taehwan Jun ◽  
Junghwan Kim ◽  
Masato Sasase ◽  
Hideo Hosono
Keyword(s):  
Material Design ◽  
Amorphous Semiconductor ◽  
P Type

Water Vapour Effects on the Oxidation of Chromia-Forming Alloys

2011 ◽  
Vol 696 ◽  
pp. 200-205 ◽  
Author(s):  
Alain Galerie ◽  
Jean Pierre Petit ◽  
Yves Wouters ◽  
Julie Mougin ◽  
Anusara Srisrual ◽  
...  
Keyword(s):  
Water Vapour ◽  
Stainless Steels ◽  
High Mobility ◽  
Major Change ◽  
Growth Direction ◽  
Band Gap Energy ◽  
Type Semiconductor ◽  
Temperature Relaxation ◽  
P Type ◽  
Chromia Scales

The electronic properties of chromia scales grown between 800°C and 900°C on chromium metal and chromia-forming ferritic stainless steels were determined using room temperature PhotoElectroChemistry (PEC) experiments and the relative importance of the n- and p-character of the scales could be assessed. According to the thermodynamic previsions of defects structures, the external part of all the scales grown in oxygen exhibits band gap energy around 3.5 eV, with a marked p-type character on chromium and a possibly n-type behaviour on stainless steels. On the contrary, the internal part of the scales is always n-type, with predominant interstitial chromium defects. A major change appears when chromium or stainless steels are oxidised in water vapour-argon mixtures, where the absence of a p‑type semiconductor in the scales could be evidenced. Hydrogen defects are thought to be responsible of this particular behaviour which leads to a strong reduction of residual stresses due to increased high temperature relaxation. Moreover, the inversion of the growth direction resulting from high mobility of the OH defects makes the chromia scales grown in water vapour more adherent than when grown in oxygen.

scholarly journals A simple synthesis of transparent and highly conducting p-type CuxAl1−xSy nanocomposite thin films as the hole transporting layer for organic solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16887-16896 ◽  
Author(s):  
Xin Dai ◽  
Hongwei Lei ◽  
Cong Chen ◽  
Yaxiong Guo ◽  
Guojia Fang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
High Mobility ◽  
Simple Synthesis ◽  
Inorganic P ◽  
Nanocomposite Thin Films ◽  
Hole Transporting ◽  
P Type

Inorganic p-type films with high mobility are very important for opto-electronic applications.

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