scholarly journals Memory Devices: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device (Adv. Mater. 47/2015)

2015 ◽  
Vol 27 (47) ◽  
pp. 7766-7766 ◽  
Author(s):  
He Tian ◽  
Haiming Zhao ◽  
Xue-Feng Wang ◽  
Qian-Yi Xie ◽  
Hong-Yu Chen ◽  
...  
Keyword(s):  
Memory Device ◽  
Bilayer Graphene ◽  
Memory Devices ◽  
Resistive Memory ◽  
Graphene Electrode

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

2015 ◽  
Vol 27 (47) ◽  
pp. 7767-7774 ◽  
Author(s):  
He Tian ◽  
Haiming Zhao ◽  
Xue-Feng Wang ◽  
Qian-Yi Xie ◽  
Hong-Yu Chen ◽  
...  
Keyword(s):  
Memory Device ◽  
Bilayer Graphene ◽  
Resistive Memory ◽  
Graphene Electrode

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

scholarly journals Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials

2019 ◽  
Vol 1 (7) ◽  
pp. 2718-2726
Author(s):  
T. Zhang ◽  
D. Guérin ◽  
F. Alibart ◽  
D. Troadec ◽  
D. Hourlier ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Hybrid Materials ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Forming Process ◽  
Chemical Mechanisms ◽  
Physical Mechanisms ◽  
Physical And Chemical

Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance.

scholarly journals In Situ Biasing of Conductive Bridge Resistive Memory Devices Observed in a Transmission Electron Microscope

2017 ◽  
Vol 23 (S1) ◽  
pp. 1452-1453
Author(s):  
Remy Berthier ◽  
Cécile Nail ◽  
Catherine Carabasse ◽  
Gabriel Molas ◽  
David Cooper
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Memory Devices ◽  
Resistive Memory ◽  
Transmission Electron ◽  
Conductive Bridge

scholarly journals In Situ STEM of Ag and Cu Conducting Bridge Formation through Al2O3 in Nanoscale Resistive Memory Devices

2014 ◽  
Vol 20 (S3) ◽  
pp. 1550-1551 ◽  
Author(s):  
William A. Hubbard ◽  
E. R. White ◽  
Alexander Kerelsky ◽  
Jared J. Lodico ◽  
B. C. Regan
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Bridge Formation ◽  
Conducting Bridge

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory
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