In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

2015 ◽  
Vol 27 (47) ◽  
pp. 7767-7774 ◽  
Author(s):  
He Tian ◽  
Haiming Zhao ◽  
Xue-Feng Wang ◽  
Qian-Yi Xie ◽  
Hong-Yu Chen ◽  
...  
Keyword(s):  
Memory Device ◽  
Bilayer Graphene ◽  
Resistive Memory ◽  
Graphene Electrode

scholarly journals Memory Devices: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device (Adv. Mater. 47/2015)

2015 ◽  
Vol 27 (47) ◽  
pp. 7766-7766 ◽  
Author(s):  
He Tian ◽  
Haiming Zhao ◽  
Xue-Feng Wang ◽  
Qian-Yi Xie ◽  
Hong-Yu Chen ◽  
...  
Keyword(s):  
Memory Device ◽  
Bilayer Graphene ◽  
Memory Devices ◽  
Resistive Memory ◽  
Graphene Electrode

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

scholarly journals Bilayer graphene phonovoltaic-FET: In situ phonon recycling

2017 ◽  
Vol 96 (20) ◽  
Author(s):  
Corey Melnick ◽  
Massoud Kaviany
Keyword(s):  
Bilayer Graphene

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

scholarly journals Chemically addressed switching measurements in graphene electrode memristive devices using in situ XPS

2019 ◽  
Vol 213 ◽  
pp. 231-244 ◽  
Author(s):  
Itır Köymen ◽  
Pınar Aydoğan Göktürk ◽  
Coşkun Kocabaş ◽  
Şefik Süzer
Keyword(s):  
Graphene Electrode ◽  
In Situ Xps ◽  
Graphene Structures

In situ measurements using XPS were performed on Pt/TiO2/TiOx/graphene structures to chemically address switching and hysteresis.

scholarly journals In situ manipulation and switching of dislocations in bilayer graphene

2018 ◽  
Vol 4 (8) ◽  
pp. eaat4712 ◽  
Author(s):  
Peter Schweizer ◽  
Christian Dolle ◽  
Erdmann Spiecker
Keyword(s):  
Bilayer Graphene
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