scholarly journals Organic Complementary Circuits: Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits (Adv. Mater. 40/2012)

2012 ◽  
Vol 24 (40) ◽  
pp. 5402-5402 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Dongyoon Khim ◽  
Soon-Won Jung ◽  
Minji Kang ◽  
In-Kyu You ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Electronic Circuits ◽  
High K ◽  
High K Dielectric

Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits

2012 ◽  
Vol 24 (40) ◽  
pp. 5433-5439 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Dongyoon Khim ◽  
Soon-Won Jung ◽  
Minji Kang ◽  
In-Kyu You ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Transport ◽  
Electronic Circuits ◽  
High K ◽  
High K Dielectric

scholarly journals Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065229
Author(s):  
Yanxiao Sun ◽  
Gang Niu ◽  
Wei Ren ◽  
Jinyan Zhao ◽  
Yankun Wang ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
High K ◽  
High K Dielectric

scholarly journals Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

2015 ◽  
Vol 107 (11) ◽  
pp. 113103 ◽  
Author(s):  
M. Venkata Kamalakar ◽  
B. N. Madhushankar ◽  
André Dankert ◽  
Saroj P. Dash
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
High K ◽  
High K Dielectric

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
High K ◽  
High K Dielectric

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

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