scholarly journals Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices

2012 ◽  
Vol 25 (8) ◽  
pp. 1131-1136 ◽  
Author(s):  
Santanu Sarkar ◽  
Hang Zhang ◽  
Jhao-Wun Huang ◽  
Fenglin Wang ◽  
Elena Bekyarova ◽  
...  
Nano Letters ◽  
2011 ◽  
Vol 11 (10) ◽  
pp. 4047-4051 ◽  
Author(s):  
Hang Zhang ◽  
Elena Bekyarova ◽  
Jhao-Wun Huang ◽  
Zeng Zhao ◽  
Wenzhong Bao ◽  
...  

Author(s):  
Atiye Pezeshki ◽  
Anoir Hamdi ◽  
Zuchong Yang ◽  
Aura Lubio ◽  
Iman Shackery ◽  
...  

2011 ◽  
Vol 11 (2) ◽  
pp. 1288-1292 ◽  
Author(s):  
Li-Hong Liu ◽  
Gopichand Nandamuri ◽  
Raj Solanki ◽  
Mingdi Yan

2018 ◽  
Vol 123 (3) ◽  
pp. 034304 ◽  
Author(s):  
J. G. G. S. Ramos ◽  
T. C. Vasconcelos ◽  
A. L. R. Barbosa

2014 ◽  
Vol 1658 ◽  
Author(s):  
Santanu Sarkar

ABSTRACTThe Diels-Alder (DA) pericyclic chemistry is one of the most powerful reactions in synthetic chemistry. We have recently shown that the unique zero-band-gap electronic structure of graphene at the Dirac point facilitates the band-gap-dependent DA reaction of graphene, although graphene is the thermochemical reference for carbon. We have shown that in the DA reactions, graphene can function either as a diene or a dienophile (dual nature). Such DA functionalization of graphene when applied to graphene-FET devices allows balanced functionalization (creation of a pair of new sp3 centers or divacancies) at both A and B graphene sublattices, allowing the fabrication of high mobility DA-functionalized single-layer graphene devices (DA-SLG) with acceptable on/off ratio. The chemistry is thermally reversible via retro-DA chemistry, thus allowing reversible engineering of graphene devices.


2019 ◽  
Vol 33 (31) ◽  
pp. 1950384
Author(s):  
Di Lu ◽  
Yu-E Yang ◽  
Weichun Zhang ◽  
Caixia Wang ◽  
Jining Fang ◽  
...  

We have investigated Raman spectra of the G and 2D lines of a single-layer graphene (SLG) with metallic contacts. The shift of the G and 2D lines is correlated to two different factors. Before performing annealing treatment or annealing under low temperature, the electron transfer on graphene surface is dominated by nonuniform strain effect. As the annealing treatment is enhanced, however, a suitable annealing treatment can eliminate the nonuniform strain effect where the relative work function (WF) between graphene and metal becomes a main factor to determine electronic transfer. Moreover, it is confirmed that the optimized annealing treatment can also decrease effectively the structural defect and induced disorder in graphene due to metallic contacts.


2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.


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