Self-Assembled Hexagonal Lu1–xInxFeO3 Nanopillars Embedded in Orthorhombic Lu1–xInxFeO3 Nanoparticle Matrixes as Room-Temperature Multiferroic Thin Films for Memory Devices and Spintronic Applications

2020 ◽  
Vol 3 (8) ◽  
pp. 7516-7523
Author(s):  
F. Shao ◽  
Z. Y. Ren ◽  
C. J. Lu ◽  
Y. D. Yang ◽  
Q. Zhan ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Memory Devices ◽  
Self Assembled

High resistive state retention in room temperature solution processed biocompatible memory devices for health monitoring applications

MRS Advances ◽  
2019 ◽  
Vol 4 (24) ◽  
pp. 1409-1415
Author(s):  
Akshita Mishra ◽  
Soumen Saha ◽  
Henam Sylvia Devi ◽  
Abhisek Dixit ◽  
Madhusudan Singh
Keyword(s):  
Thin Films ◽  
Health Monitoring ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Low Cost ◽  
Phosphate Buffer Solution ◽  
Thick Layer ◽  
Resistive State ◽  
Memory Devices ◽  
Monitoring Applications

AbstractWearable and bio-implantable health monitoring applications require flexible memory devices that can be used to locally store body vitals prior to transmission or to support local data processing in distributed smart systems. In recent years, non-volatile resistive random access memories composed of oxide-based insulators such as hafnium oxide and niobium pentoxide have attracted a great deal of interest. Unfortunately, hafnium and niobium are not low-cost materials and may also present health challenges. In this work, we have explored the alternative of using titanium dioxide as the insulating oxide using a low-cost solution-phase deposition process. Aqueous sol deposited thin films were deposited on standard RCA-cleaned commercial thermal silicon dioxide (500 nm) wafer (500 µm). Patterned bottom contacts Cr/Au (∼200/300 Å) using shadow masks were deposited on the substrate using successive DC sputtering, and thermal evaporation, respectively at 5 X 10-6 Torr. A sol was prepared using titanium (IV) butoxide as precursor hydrolysed under water and ethanol to form a colloidal solution (sol) at 50°C under constant stirring. Powder X-Ray Diffraction (PXRD) scans of calcined (from sol at 750°C) nanoparticles show a mixture of anatase and rutile phases, confirming the composition of the material. The sol was slowly cooled to room temperature before being spin coated at low rotational speeds on to the substrate in multiple steps involving several spin coating and drying steps to form a uniform film. Top contacts (Ag) of thickness (∼500 Å) were deposited on the sol-deposited thin films using thermal evaporation. The resulting devices were coated with a thick layer of polydimethylsiloxane (PDMS) using a 10:1 ratio of base elastomer and curing agent respectively. After drying the PDMS, resistance measurements were carried out. A high resistance state was detected prior to electroforming in the air at ∼5 MΩ which remains nearly unchanged (∼4.3 MΩ) when dipped in a ∼7.4 pH phosphate buffer solution (equivalent to human blood’s pH (reference average value ∼7.4 pH)). Unencapsulated devices (UM1) were further characterized in air using a Keithley 4200-SCS semiconductor parameter analyzer in dual sweep mode to observe repeatable hysteresis behavior with a large difference between trace and retrace R-V characteristics (∼50±3% over a pristine device), which compares favorably with recent data in the literature on high-performance sputtered TiO2 memristors. Unchanged retention ratio using biocompatible device materials and encapsulation suggests that these devices can be used for biomedical implantable sensor electronics.

scholarly journals Room temperature magnetoresistance properties in self-assembled epitaxial La0.7Sr0.3MnO3:NiO nanocomposite thin films

2018 ◽  
Vol 6 (9) ◽  
pp. 489-494 ◽  
Author(s):  
Y. J. Wu ◽  
Z. J. Wang ◽  
X. K. Ning ◽  
Q. Wang ◽  
W. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Nanocomposite Thin Films ◽  
Self Assembled

scholarly journals Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

1998 ◽  
Vol 72 (25) ◽  
pp. 3270-3272 ◽  
Author(s):  
Z. K. Tang ◽  
G. K. L. Wong ◽  
P. Yu ◽  
M. Kawasaki ◽  
A. Ohtomo ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Laser Emission ◽  
Ultraviolet Laser ◽  
Self Assembled

X-ray reflectivity study of solution-deposited ZrO2 thin films on self-assembled monolayers: Growth, interface properties, and thermal densification

2000 ◽  
Vol 15 (12) ◽  
pp. 2706-2713 ◽  
Author(s):  
K. A. Ritley ◽  
K-P. Just ◽  
F. Schreiber ◽  
H. Dosch ◽  
T. P. Niesen ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Nonlinear Function ◽  
Film Structure ◽  
Self Assembled Monolayers ◽  
Growth Interface ◽  
Aqueous Synthesis ◽  
X Ray ◽  
Assembled Monolayers ◽  
Self Assembled

Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by functionalized alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability, and densification of these films in the temperature range from room temperature to 750 °C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution, with a pronounced nonuniformity during the first 30 min. The as-deposited films exhibit about 3-nm roughness and a density below that of bulk ZrO2. Measurements in vacuum reveal decreasing film thickness, increasing film density, and decreasing roughness upon annealing up to 750 °C. The densification saturates at the highest measured temperatures, presumably following evaporation of residual contaminants from the aqueous synthesis procedure. Above 200 °C the SAM/ZrO2 interface began to deteriorate, possibly due to interdiffusion. The ZrO2 film structure obtained at the highest annealing temperatures persisted upon cooling to room temperature, and there was no visible evidence of stress-induced microstructural changes, such as peeling or cracking.

Vertically Aligned Nanocomposite BaTiO3:YMnO3 Thin Films with Room Temperature Multiferroic Properties toward Nanoscale Memory Devices

2018 ◽  
Vol 1 (6) ◽  
pp. 2509-2514 ◽  
Author(s):  
Xingyao Gao ◽  
Leigang Li ◽  
Jie Jian ◽  
Han Wang ◽  
Meng Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Memory Devices ◽  
Multiferroic Properties ◽  
Vertically Aligned

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Sign in / Sign up

Export Citation Format

Share Document