scholarly journals Correction: Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures

2010 ◽  
Vol 22 (45) ◽  
pp. 5081-5081
Author(s):  
Masaki Nakano ◽  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Kazunori Ueno ◽  
Shunsuke Akasaka ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Field Control ◽  
Electronic Field

Correction: Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures

2010 ◽  
Vol 22 (14) ◽  
pp. n/a-n/a ◽  
Author(s):  
Masaki Nakano ◽  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Kazunori Ueno ◽  
Shunsuke Akasaka ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Field Control ◽  
Electronic Field

Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures

2010 ◽  
Vol 22 (8) ◽  
pp. 876-879 ◽  
Author(s):  
Masaki Nakano ◽  
Atsushi Tsukazaki ◽  
Akira Ohtomo ◽  
Kazunori Ueno ◽  
Shunsuke Akasaka ◽  
...  
Keyword(s):  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Field Control ◽  
Electronic Field

scholarly journals SAT-Attack Resistant Hardware Obfuscation using Camouflaged Two-Dimensional Heterostructure Devices

2020 ◽  
Author(s):  
Akshay Wali ◽  
Andrew Arnold ◽  
Shamik Kundu ◽  
Soumyadeep Choudhury ◽  
Kanad Basu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Reverse Engineering ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Logic Gates ◽  
Pattern Generation ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Area Overhead ◽  
Heterostructure Devices

Abstract Reverse engineering (RE) is one of the major security threats to the semiconductor industry due to the involvement of untrustworthy parties in an increasingly globalized chip manufacturing supply chain [1-5]. RE efforts have already been successful in extracting device level functionalities from an integrated circuit (IC) with very limited resources [6]. Camouflaging is an obfuscation method that can thwart such RE [7-9]. Existing work on IC camouflaging primarily uses fabrication techniques such as doping and dummy contacts to hide the circuit structure or build cells that look alike but have different functionalities. While promising these Si complementary metal oxide semiconductor (CMOS) based obfuscation techniques adds significant area overhead and are successfully decamouflaged by the Satisfiability solver (SAT)-based reverse engineering techniques [9-13]. Emerging solutions, such as polymorphic gates based on giant spin Hall effect (GSHE) are promising but adds delay overhead in hybrid CMOS-GSHE designs restricting the camouflaging to a maximum of 15% of all the gates in the circuit. Here, we harness the unique properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) including MoS2, MoSe2, MoTe2, WS2, and WSe2 and their optically transparent transition metal oxides (TMOs) to demonstrate novel area efficient camouflaging solutions that are resilient to SAT-attack and automatic test pattern generation (ATPG) attacks. We show that resistors with resistance values differing by 8 orders of magnitude, diodes with variable turn-on voltages and reverse saturation currents, and field effect transistors (FETs) with adjustable conduction type, threshold voltages and switching characteristics can be optically camouflaged to look exactly similar by engineering TMO/TMD heterostructures allowing hardware obfuscation of both digital and analog circuits. Since this 2D heterostructure devices family is intrinsically camouflaged, NAND/NOR/AND/OR gates in the circuit can be obfuscated with significantly less area overhead allowing 100% logic obfuscation compared to only 5% for CMOS-based camouflaging. Finally, we demonstrate that the largest benchmarking circuit from ISCAS’85, comprised of more than 4000 logic gates when obfuscated with the CMOS-based technique are successfully decamouflaged by SAT-attack in less than 40 minutes; whereas, it renders to be invulnerable even in more than 10 hours, when camouflaged with 2D heterostructure devices thereby corroborating our hypothesis of high resilience against RE. Our approach of connecting unique material properties to innovative devices to secure circuits can be considered as one of its kind demonstrations, highlighting the benefits of cross-layer optimization.

Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

2021 ◽  
Author(s):  
Pin Tian ◽  
Hongbo Wu ◽  
Libin Tang ◽  
Jinzhong Xiang ◽  
Rongbin Ji ◽  
...  
Keyword(s):  
Large Scale ◽  
2D Materials ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Photocurrent Density ◽  
Short Wave ◽  
Oxide Semiconductor ◽  
Light Illumination ◽  
Two Dimensional ◽  
Weak Light

Abstract Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.

Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures

1997 ◽  
Vol 56 (15) ◽  
pp. 9565-9574 ◽  
Author(s):  
A. Palma ◽  
A. Godoy ◽  
J. A. Jiménez-Tejada ◽  
J. E. Carceller ◽  
J. A. López-Villanueva
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Time Constants ◽  
Semiconductor Structures ◽  
Random Telegraph Signals

The band gap and band offset in ultrathin oxide–semiconductor heterostructures

2010 ◽  
Vol 47 (3) ◽  
pp. 369-376 ◽  
Author(s):  
D. Schmeißer ◽  
K. Henkel ◽  
M. Bergholz ◽  
M. Tallarida
Keyword(s):  
Band Gap ◽  
Semiconductor Heterostructures ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Ultrathin Oxide
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