Design Rules for Phase-Change Materials in Data Storage Applications

2011 ◽  
Vol 23 (18) ◽  
pp. 2030-2058 ◽  
Author(s):  
Dominic Lencer ◽  
Martin Salinga ◽  
Matthias Wuttig
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Design Rules

Structure of Phase Change Materials for Data Storage

2006 ◽  
Vol 96 (5) ◽  
Author(s):  
Zhimei Sun ◽  
Jian Zhou ◽  
Rajeev Ahuja
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

Phase-change materials for rewriteable data storage

2007 ◽  
Vol 6 (11) ◽  
pp. 824-832 ◽  
Author(s):  
Matthias Wuttig ◽  
Noboru Yamada
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

scholarly journals A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

2015 ◽  
Vol 3 (37) ◽  
pp. 9519-9523 ◽  
Author(s):  
Volker L. Deringer ◽  
Wei Zhang ◽  
Pascal Rausch ◽  
Riccardo Mazzarello ◽  
Richard Dronskowski ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Chemical Bonding ◽  
Phase Change Materials ◽  
Bonding Theory

Chemical-bonding theory reveals a common electronic “fingerprint” in seemingly different phase-change materials for data storage.

scholarly journals Lattice Thermal Conductivity of mGeTe•nSb2Te3 Phase-Change Materials: A First-Principles Study

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 136 ◽  
Author(s):  
Yuanchun Pan ◽  
Zhen Li ◽  
Zhonglu Guo
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Data Storage ◽  
First Principles ◽  
Phase Change Materials ◽  
Lattice Thermal Conductivity ◽  
Transport Theory ◽  
Large Contribution ◽  
Thermal Transport Property ◽  
Boltzmann Transport Theory

As the most promising materials for phase-change data storage, the pseudobinary mGeTe•nSb2Te3 (GST) chalcogenides have been widely investigated. Nevertheless, an in-depth understanding of the thermal-transport property of GST is still lacking, which is important to achieve overall good performance of the memory devices. Herein, by using first-principles calculations and Boltzmann transport theory, we have systematically studied the lattice thermal conductivity along the out of plane direction of both stable hexagonal and meta-stable rock-salt-like phases of GST, and good agreement with available experiments has been observed. It is revealed that with the increase of the n/m ratio, the lattice thermal conductivity of hexagonal GST increases due to the large contribution from the weak Te-Te bonding, while an inverse trend is observed in meta-stable GST, which is due to the increased number of vacancies that results in the decrease of the lattice thermal conductivity. The size effect on thermal conductivity is also discussed. Our results provide useful information to manipulate the thermal property of GST phase-change materials.

Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

2003 ◽  
Vol 803 ◽  
Author(s):  
C. D. Wright ◽  
M. Armand ◽  
M. M. Aziz ◽  
S. Senkader ◽  
W. Yu
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Random Access ◽  
Optical Data Storage ◽  
Operating Conditions ◽  
Optical Data ◽  
Probe Type ◽  
Practical Utilization ◽  
Transformation Processes

ABSTRACTAttempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.

Phase-Change Media for High-Density Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Laser Heating ◽  
Phase Change Materials ◽  
Optical Storage ◽  
Sputter Deposition ◽  
Optical Recording ◽  
Thermal Design ◽  
Recording Media ◽  
Audio Video

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.

scholarly journals Erratum: Phase-change materials for rewriteable data storage

2007 ◽  
Vol 6 (12) ◽  
pp. 1004-1004 ◽  
Author(s):  
Matthias Wuttig ◽  
Noboru Yamada
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

scholarly journals The Orbital Origins of Chemical Bonding in Phase-Change Materials

2021 ◽  
Author(s):  
Jan Hempelmann ◽  
Peter C. Müller ◽  
Christina Ertural ◽  
Richard Dronskowski
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Decisive Role ◽  
Crystal Orbital ◽  
Change Behavior ◽  
New Findings ◽  
Longe Range ◽  
Multicenter Bonding

Layered phase-change materials in the Ge–Sb–Te-system are widely used in data storage and are the subject of intense research to understand the elusive quantum-chemical origin of their unique properties. To uncover the nature of the underlying periodic wavefunction, we study the interacting atomic orbitals including their phase information as revealed by crystal orbital bond index (COBI) and fragment crystal orbital (FCO) analysis. In full accord with previous and also new findings based on projected force constants (pFC), we demonstrate the decisive role of multicenter bonding along straight atomic connectivities such as Te–Ge–Te and Te–Sb–Te. While the here found multicenter bonding resembles well-established three-center four-electron bonding in molecules, its solid-state manifestation beyond a molecular motif leads to distinct longe-range consequences, thus serving to contextualize the aforementioned material properties usually termed “metavalent”. For example, we suggest multicenter bonding to be the origin of their astonishing bond-breaking and also phase-change behavior. As a hole-in-one, multicenter bonding immediately explains the too small “van der Waals” gaps between individual layers since multicenter bonding forces these gaps to shrink below the nonbonding Te–Te distances.

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