scholarly journals A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

2015 ◽  
Vol 3 (37) ◽  
pp. 9519-9523 ◽  
Author(s):  
Volker L. Deringer ◽  
Wei Zhang ◽  
Pascal Rausch ◽  
Riccardo Mazzarello ◽  
Richard Dronskowski ◽  
...  

Chemical-bonding theory reveals a common electronic “fingerprint” in seemingly different phase-change materials for data storage.

Author(s):  
Richard Dronskowski ◽  
Jan Hempelmann ◽  
Peter C. Müller ◽  
Christina Ertural

2006 ◽  
Vol 96 (5) ◽  
Author(s):  
Zhimei Sun ◽  
Jian Zhou ◽  
Rajeev Ahuja

2019 ◽  
Vol 13 (4) ◽  
pp. 1800579 ◽  
Author(s):  
Philipp M. Konze ◽  
Richard Dronskowski ◽  
Volker L. Deringer

2007 ◽  
Vol 6 (11) ◽  
pp. 824-832 ◽  
Author(s):  
Matthias Wuttig ◽  
Noboru Yamada

2011 ◽  
Vol 23 (18) ◽  
pp. 2030-2058 ◽  
Author(s):  
Dominic Lencer ◽  
Martin Salinga ◽  
Matthias Wuttig

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 136 ◽  
Author(s):  
Yuanchun Pan ◽  
Zhen Li ◽  
Zhonglu Guo

As the most promising materials for phase-change data storage, the pseudobinary mGeTe•nSb2Te3 (GST) chalcogenides have been widely investigated. Nevertheless, an in-depth understanding of the thermal-transport property of GST is still lacking, which is important to achieve overall good performance of the memory devices. Herein, by using first-principles calculations and Boltzmann transport theory, we have systematically studied the lattice thermal conductivity along the out of plane direction of both stable hexagonal and meta-stable rock-salt-like phases of GST, and good agreement with available experiments has been observed. It is revealed that with the increase of the n/m ratio, the lattice thermal conductivity of hexagonal GST increases due to the large contribution from the weak Te-Te bonding, while an inverse trend is observed in meta-stable GST, which is due to the increased number of vacancies that results in the decrease of the lattice thermal conductivity. The size effect on thermal conductivity is also discussed. Our results provide useful information to manipulate the thermal property of GST phase-change materials.


2003 ◽  
Vol 803 ◽  
Author(s):  
C. D. Wright ◽  
M. Armand ◽  
M. M. Aziz ◽  
S. Senkader ◽  
W. Yu

ABSTRACTAttempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.


2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.


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