scholarly journals Silicon Quantum Dot Light Emitting Diode at 620 nm

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 318 ◽  
Author(s):  
Hiroyuki Yamada ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Optically Active ◽  
Driving Voltage ◽  
Device Structure ◽  
Light Emitting ◽  
Naked Eye ◽  
Turn On ◽  
Silicon Quantum Dot

Here we report a quantum dot light emitting diode (QLED), in which a layer of colloidal silicon quantum dots (SiQDs) works as the optically active component, exhibiting a strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation of the EL spectral peak, even in air, when the operation voltage varied in the range from 4 to 5 V because of the possible advantage of the inverted device structure. The pale-orange EL spectrum was as narrow as 95 nm. Interestingly, the EL spectrum was narrower than the corresponding photoluminescence (PL) spectrum. The EL emission was strong enough to be seen by the naked eye. The currently obtained brightness (∼4200 cd/m2), the 0.033% external quantum efficiency (EQE), and a turn-on voltage as low as 2.8 V show a sufficiently high performance when compared to other orange-light-emitting Si-QLEDs in the literature. We also observed a parasitic emission from the neighboring compositional layer (i.e., the zinc oxide layer), and its intensity increased with the driving voltage of the device.

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot

scholarly journals Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Turn On ◽  
Injection Material

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

High-Performance Transparent Quantum Dot Light-Emitting Diode with Patchable Transparent Electrodes

2019 ◽  
Vol 11 (29) ◽  
pp. 26333-26338 ◽  
Author(s):  
Sunho Kim ◽  
Jungwoo Kim ◽  
Daekyoung Kim ◽  
Bongsung Kim ◽  
Heeyeop Chae ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diode ◽  
Transparent Electrodes ◽  
Light Emitting

A highly efficient white quantum dot light-emitting diode employing magnesium doped zinc oxide as the electron transport layer based on bilayered quantum dot layers

2018 ◽  
Vol 6 (30) ◽  
pp. 8099-8104 ◽  
Author(s):  
Lixi Wang ◽  
Jiangyong Pan ◽  
Jianping Qian ◽  
Wei Lei ◽  
Yuanjun Wu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diode ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Driving Voltage ◽  
Light Emitting ◽  
White Emission ◽  
Highly Efficient

A highly efficient QLED achieving white emission at a low driving voltage is obtained by employing Zn0.95Mg0.05O as the electron transport layer.

scholarly journals Embryonic development of fully biocompatible organic light-emitting diodes

2021 ◽  
Author(s):  
Bruno F.E. Matarese
Keyword(s):  
Light Source ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Organic Light ◽  
Biological Environment

Prototype fully biocompatible organic light-emitting diodes are investigated, with a view to creating a suitable and high-performance light source as a medical implant device. A selection of organic LED materials that have potential suitability for the biological environment are examined. First, the biocompatibility of selected OLED materials was evaluated by the study of cell adhesion and cytotoxicity of HeLa cells cultured on the candidate materials. Thus it was possible to design a device structure composed entirely of biocompatible materials. Second, the characterization of the electroluminescence properties of the prototype OLED is shown and its limitation evaluated. Third, the aqueous stability of the fully biocompatible light source is examined. There is strong evidence that fully biocompatible and stable light-emitting implant devices can be easily constructed. This is the first time a fully biocompatible organic light-emitting diode, albeit embryonic, is reported, with the hope that it may lead to further research to optimize the device performance. Some suggestions on suitable device properties towards in vivo transition are provided.

Hybrid White Quantum Dot-Organic Light-Emitting Diodes with Highly Stable CIEx,y Coordinates by Introduction of n-Type Modulation and Multi-Stacked Hole Transporting Layer

2021 ◽  
Author(s):  
Hakjun Lee ◽  
Seung-Won Song ◽  
Kyo Min Hwang ◽  
Ki Ju Kim ◽  
Heesun Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Organic Light Emitting Diodes ◽  
Device Structure ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Device Architecture ◽  
Organic Light ◽  
Hole Transporting ◽  
Novel Concept

Extremely stable white emission out of a hybrid white quantum dot-organic light-emitting diode (WQD-OLED) was achieved by developing a novel concept of device architecture. The new inverted device structure employs...

scholarly journals Efficient Tandem Organic Light Emitting Diode Using Organic Photovoltaic Charge Generation Layer

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Akanksha Jetly ◽  
Rajesh Mehra
Keyword(s):  
Current Efficiency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Organic Photovoltaic ◽  
Distributed Bragg Reflector ◽  
Charge Generation ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Turn On

Highly efficient tandem red OLED is proposed using planar organic heterojunction based charge generation layer (CGL) of C70 (Fullerene)/CoPc (Cobalt Phthalocyanine). The proposed charge generation layer generates charges and exhibits organic photovoltaic type (OPV) behavior in the red emitter zone which helps in slower efficiency roll-off at higher current densities. In addition an ultrathin layer of Al/LiF is used as electron injection layer (EIL) so as to enhance the injection of electrons from charge generation layer to emissive unit. It is found that the tandem red device can reach current efficiency and luminance of 26 cd/A and 26039 cd/m2 at 20 mA/cm2 and 100 mA/cm2, respectively, which is 1.663 times and 1.665 times higher than the corresponding single emitter device. Moreover, it is known that the tandem device requires double turn-on voltage than conventional devices. In this work, the turn-on voltage of red tandem device (5.85 V) is found to be less than twice the voltage of conventional device (3 V). Further with the introduction of Distributed Bragg Reflector (DBR), enhancement in current efficiency and brightness of tandem red device are observed due to high reflectance property of DBR. Thus, the effective charge generation and OPV function of proposed charge generation layer as well as remarkably high injection property of EIL layer lead to the high performance tandem OLED.

Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern

2006 ◽  
Vol 89 (19) ◽  
pp. 191120 ◽  
Author(s):  
Kyung-Hyun Kim ◽  
Jae-Heon Shin ◽  
Nae-Man Park ◽  
Chul Huh ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Surface Pattern ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Rugged Surface

Inverted Device Architecture for Enhanced Performance of Flexible Silicon Quantum Dot Light-Emitting Diode

2018 ◽  
Vol 9 (18) ◽  
pp. 5400-5407 ◽  
Author(s):  
Batu Ghosh ◽  
Hiroyuki Yamada ◽  
Shanmugavel Chinnathambi ◽  
İrem Nur Gamze Özbilgin ◽  
Naoto Shirahata
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Device Architecture ◽  
Silicon Quantum Dot ◽  
Inverted Device
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