Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Sub-micrometer-sized Silica Balls

2006 ◽  
Vol 18 (21) ◽  
pp. 2833-2836 ◽  
Author(s):  
S. J. An ◽  
Y. J. Hong ◽  
G.-C. Yi ◽  
Y.-J. Kim ◽  
D. K. Lee
2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.


2009 ◽  
Vol 08 (03) ◽  
pp. 299-303 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
ABDOLGHAFAR BARZEGAR ◽  
MOHAMMAD HOSSEIN SHEIKHI

Ferroelectric PbZr 1-x Ti x O 3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.


2016 ◽  
Vol 658 ◽  
pp. 862-866 ◽  
Author(s):  
Wenfeng Xiang ◽  
Chongyang Zhao ◽  
Kun Liu ◽  
Guling Zhang ◽  
Kun Zhao

1998 ◽  
Vol 13 (12) ◽  
pp. 3555-3564 ◽  
Author(s):  
Andrew V. Zhuk ◽  
Anthony G. Evans ◽  
John W. Hutchinson ◽  
George M. Whitesides

A superlayer test has been adapted for the measurement of the fracture energy between epoxy thin films and self-assembled monolayers (SAM's) on Au/Ti/Si substrates. The “arrest” mode of analysis has been shown to provide consistent results, particularly when relatively wide lines are used to encourage lateral decohesions. The fracture energy, Γi, of the interface between the monolayer and the epoxy is varied by adjusting the ratio of COOH/CH3 terminal groups. Connections among Γi, the surface energies, and the inelastic deformations occurring in the epoxy are explored upon comparison with interface crack growth simulations.


1992 ◽  
Vol 60 (7) ◽  
pp. 886-888 ◽  
Author(s):  
R. Venkatasubramanian ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
B. M. Keyes ◽  
R. K. Ahrenkiel

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Asuka Osumi ◽  
Kenichi Kaminaga ◽  
Shingo Maruyama ◽  
Yuji Matsumoto

We employ our pulsed laser deposition system with rapid beam deflection to demonstrate the heteroepitaxial growth of 3C–SiC thin films by a vapour–liquid–solid-like mechanism by alternating deposition of SiC and NiSi2 flux in nanoscale.


2018 ◽  
Vol 6 (20) ◽  
pp. 5552-5561 ◽  
Author(s):  
Tae Cheol Kim ◽  
Shuchi Ojha ◽  
Guo Tian ◽  
Seung Han Lee ◽  
Hyun Kyu Jung ◽  
...  

Sputter-grown self-assembled epitaxial spinel–perovskite nanocomposites consisting of CoFe2O4 pillars in a BiFeO3 matrix on Nb-doped SrTiO3 or SrTiO3-buffered Si substrates.


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