scholarly journals Self-assembled multiferroic epitaxial BiFeO3–CoFe2O4 nanocomposite thin films grown by RF magnetron sputtering

2018 ◽  
Vol 6 (20) ◽  
pp. 5552-5561 ◽  
Author(s):  
Tae Cheol Kim ◽  
Shuchi Ojha ◽  
Guo Tian ◽  
Seung Han Lee ◽  
Hyun Kyu Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Nanocomposite Thin Films ◽  
Self Assembled

Sputter-grown self-assembled epitaxial spinel–perovskite nanocomposites consisting of CoFe2O4 pillars in a BiFeO3 matrix on Nb-doped SrTiO3 or SrTiO3-buffered Si substrates.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

Epitaxial Growth and Electrical Characterization of PBZT Thin Films by RF Magnetron Sputtering Deposition

2007 ◽  
Vol 336-338 ◽  
pp. 173-176
Author(s):  
Hui Qing Fan ◽  
Lai Jun Liu ◽  
Xiu Li Chen ◽  
Jie Zhang ◽  
Wei Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Pyrochlore Phase ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Sputtering Deposition ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P~E).

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

scholarly journals The Effect of Oxygen Mixing Percentage on Structural, Optical and Electrical Properties of ZnTiO3 Thin-films Grown by Rf Magnetron Sputtering.

2021 ◽  
Author(s):  
srinivasa varaprsad H ◽  
sridevi P. V ◽  
Satya Anuradha M ◽  
Srinivas Pattipaka ◽  
pamu D
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Thermionic Emission ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Atomic Force ◽  
Excitation Coefficient ◽  
Effect Of Oxygen

Abstract Perovskites are important composites in the area of multidisciplinary applications. It is achieved by carefully choosing and tuning the properties of the thin-film at the deposition. In this paper, ZnTiO3 (ZTO) thin-films were being deposited on quartz and N-Si substrates by RF magnetron sputtering. The thin-films were developed at room temperature, oxygen percentage levels varying from 0 to 100, and annealed at 600oC. The electrical, optical, morphological, and structural properties were analyzed as a function of oxygen mixing percentage (OMP). The crystallinity of the cubic structured ZTO thin-film is found to be high at 25 OMP, and it is gradually decreased with increased OMP. The surface morphology of the thin-film is observed, and roughness is measured from the atomic force microscope. Raman Spectroscopy investigated the phase formation and the vibrational modes of the thin-film with their spectral de-convolution. The ZTO thin-films optical properties were investigated using transmittance spectra. The ZTO thin-film indicated the highest refractive index of 2.46, at 633nm with optical bandgap values of 3.57 eV, with a thickness of 145nm and 25 OMP. The refractive index, thin-film thickness, and excitation coefficient were analyzed using the Swanepoel envelope technique. Electrical characteristics of ZTO thin-film are measured from the optimized conditions of the thin-film with conventional thermionic emission (TE) technique.

Growth of Bi1.5MgNb1.5O7 thin films on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering

2014 ◽  
Vol 25 (3) ◽  
pp. 1474-1479 ◽  
Author(s):  
Hong Gao ◽  
Yinong Lu ◽  
Yunfei Liu ◽  
Chengjian Ma ◽  
Hao Qian ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrates

Effects of (100)-textured LaNiO3 Electrode on the Deposition and Characteristics of PbTiO3 Thin Films Prepared by rf Magnetron Sputtering

1997 ◽  
Vol 12 (8) ◽  
pp. 2158-2164 ◽  
Author(s):  
Chii-Ming Wu ◽  
Tian-Jue Hong ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Temperature ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Oriented Films ◽  
Lanio3 Electrode ◽  
Ferroelectric Hysteresis ◽  
Hysteresis Characteristics

Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at temperatures ≥480 °C, while randomly oriented PbTiO3 films were obtained on Pt/Ti/SiO2/Si substrates. The textured LNO layer can help to control the orientation of PbTiO3 thin films, and reduce their surface roughness quite significantly. The dielectric constant (εT) of PbTiO3 films deposited on LNO was lower than that of films on Pt and the dielectric loss (tan δ) increased when a higher deposition temperature or longer time was used. The highly (100)-textured PbTiO3 films also showed different ferroelectric hysteresis characteristics, i.e., a higher coercive field and a lower remanent polarization, from that of randomly oriented films deposited on Pt.

Preparation and Ferroelectric Properties of Bi4-xErxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 232-235
Author(s):  
Jian Guo Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ferroelectric Property ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Random Orientation ◽  
Er Doping ◽  
Si Substrates ◽  
Remarkable Improvement

Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.

Preparation and Ferroelectric Properties of Bi4-xTmxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 41-44
Author(s):  
Bei Li ◽  
X.H. Yuan ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Remarkable Improvement ◽  
Layered Perovskite Structure

Tm2O3-doped bismuth titanate (Bi4-xTmxTi3O12, BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tm doping into BIT results in remarkable improvement in ferroelectric properties. The Pr and the Ec values of the BTT film with x=0.75 were 28 μC/cm2 and 80 kV/cm, respectively.

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