Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates

2005 ◽  
Vol 17 (12) ◽  
pp. 1527-1531 ◽  
Author(s):  
A. T. Findikoglu ◽  
W. Choi ◽  
V. Matias ◽  
T. G. Holesinger ◽  
Q. X. Jia ◽  
...  
2018 ◽  
Vol 44 (3) ◽  
pp. 3291-3296 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Pei-Jie Chen ◽  
Sin-Liang Ou ◽  
Cheng-Yi Liu ◽  
...  

2020 ◽  
Vol 46 (2) ◽  
pp. 2173-2177 ◽  
Author(s):  
Yanqiu Liu ◽  
Shunjin Zhu ◽  
Renhuai Wei ◽  
Ling Hu ◽  
Xianwu Tang ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (70) ◽  
pp. 36929-36939 ◽  
Author(s):  
Basudeb Sain ◽  
Debajyoti Das

The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.


2007 ◽  
Vol 19 (6) ◽  
pp. 833-837 ◽  
Author(s):  
D. M. DeLongchamp ◽  
R. J. Kline ◽  
E. K. Lin ◽  
D. A. Fischer ◽  
L. J. Richter ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (40) ◽  
pp. 21042-21048 ◽  
Author(s):  
Pavel Dutta ◽  
Monika Rathi ◽  
Yao Yao ◽  
Ying Gao ◽  
Goran Majkic ◽  
...  

Roll-to-roll growth of single-crystalline-like germanium thin films with high carrier mobility on low-cost flexible Ni–W metal foils has been demonstrated.


2011 ◽  
Vol 4 (9) ◽  
pp. 091601 ◽  
Author(s):  
Takuji Kato ◽  
Mao Yasumatsu ◽  
Chikako Origuchi ◽  
Kyoji Tsutsui ◽  
Yasukiyo Ueda ◽  
...  

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