The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.
Roll-to-roll growth of single-crystalline-like germanium thin films with high carrier mobility on low-cost flexible Ni–W metal foils has been demonstrated.