Heavily Doped poly(3,4-ethylenedioxythiophene) Thin Films with High Carrier Mobility Deposited Using Oxidative CVD: Conductivity Stability and Carrier Transport

2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
Sunghwan Lee ◽  
David C. Paine ◽  
Karen K. Gleason
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Heavily Doped

scholarly journals High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

2018 ◽  
Vol 4 (9) ◽  
pp. eaat5780 ◽  
Author(s):  
Xiaoxue Wang ◽  
Xu Zhang ◽  
Lei Sun ◽  
Dongwook Lee ◽  
Sunghwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Radio Frequency Identification ◽  
Acid Treatment ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Great Promise ◽  
High Electrical Conductivity ◽  
High Carrier Mobility ◽  
High Carrier

Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2V−1s−1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

p-type conductive NiOx: Cu thin films with high carrier mobility deposited by ion beam assisted deposition

2018 ◽  
Vol 44 (3) ◽  
pp. 3291-3296 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Pei-Jie Chen ◽  
Sin-Liang Ou ◽  
Cheng-Yi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates

2005 ◽  
Vol 17 (12) ◽  
pp. 1527-1531 ◽  
Author(s):  
A. T. Findikoglu ◽  
W. Choi ◽  
V. Matias ◽  
T. G. Holesinger ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Silicon Thin Films ◽  
High Carrier Mobility ◽  
High Carrier

Solution processed W-doped In2O3 thin films with high carrier mobility

2020 ◽  
Vol 46 (2) ◽  
pp. 2173-2177 ◽  
Author(s):  
Yanqiu Liu ◽  
Shunjin Zhu ◽  
Renhuai Wei ◽  
Ling Hu ◽  
Xianwu Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Solution Processed ◽  
High Carrier Mobility ◽  
High Carrier

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (70) ◽  
pp. 36929-36939 ◽  
Author(s):  
Basudeb Sain ◽  
Debajyoti Das
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Crystal Orientation ◽  
Carrier Mobility ◽  
Third Generation ◽  
Temperature Plasma ◽  
High Carrier Mobility ◽  
High Carrier

The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

High Carrier Mobility Polythiophene Thin Films: Structure Determination by Experiment and Theory

2007 ◽  
Vol 19 (6) ◽  
pp. 833-837 ◽  
Author(s):  
D. M. DeLongchamp ◽  
R. J. Kline ◽  
E. K. Lin ◽  
D. A. Fischer ◽  
L. J. Richter ◽  
...  
Keyword(s):  
Thin Films ◽  
Structure Determination ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier
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