scholarly journals Transparent Electronics: Solution‐Processed Self‐Powered Transparent Ultraviolet Photodetectors with Ultrafast Response Speed for High‐Performance Communication System (Adv. Funct. Mater. 20/2019)

2019 ◽  
Vol 29 (20) ◽  
pp. 1970139
Author(s):  
Huajing Fang ◽  
Cheng Zheng ◽  
Liangliang Wu ◽  
Yi Li ◽  
Jian Cai ◽  
...  
Keyword(s):  
Communication System ◽  
High Performance ◽  
Response Speed ◽  
Transparent Electronics ◽  
Solution Processed ◽  
Self Powered ◽  
Ultraviolet Photodetectors

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors

Nanoscale ◽  
2017 ◽  
Vol 9 (13) ◽  
pp. 4536-4543 ◽  
Author(s):  
Buddha Deka Boruah ◽  
Shanmukh Naidu Majji ◽  
Abha Misra
Keyword(s):  
High Performance ◽  
Zno Nanorods ◽  
Charge Effect ◽  
Doped Zno ◽  
Self Powered ◽  
Ultraviolet Photodetectors

High performance MoO3−x/Si heterojunction photodetectors with nanoporous pyramid Si arrays for visible light communication application

2019 ◽  
Vol 7 (4) ◽  
pp. 917-925 ◽  
Author(s):  
Yujin Liu ◽  
Guobiao Cen ◽  
Gai Wang ◽  
Junwei Huang ◽  
Suhang Zhou ◽  
...  
Keyword(s):  
Visible Light ◽  
Communication System ◽  
High Performance ◽  
Visible Light Communication ◽  
Fast Response ◽  
Optical Signal ◽  
Self Powered

Self-powered, fast-response heterojunction photodetectors based on nanoporous pyramid Si arrays are successfully developed. The photodetector is further integrated into a visible light communication system as an optical signal receiver.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2020 ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

Abstract In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offers higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve a high-performance, self-powered and stabilized photodetectors with fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

scholarly journals Fabrication of GaN nano-towers based self-powered UV photodetector

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Lalit Goswami ◽  
Neha Aggarwal ◽  
Pargam Vashishtha ◽  
Shubhendra Kumar Jain ◽  
Shruti Nirantar ◽  
...  
Keyword(s):  
High Performance ◽  
Volume Ratio ◽  
Fast Time ◽  
Trap States ◽  
Barrier Heights ◽  
Photocurrent Generation ◽  
Lower Strain ◽  
Self Powered ◽  
Aln Buffer ◽  
Ultraviolet Photodetectors

AbstractThe fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

High performance self-powered ultraviolet photodetectors based on electrospun gallium nitride nanowires

2018 ◽  
Vol 452 ◽  
pp. 43-48 ◽  
Author(s):  
Mingxiang Zhang ◽  
Ying Liu ◽  
Mengqi Yang ◽  
Wen Zhang ◽  
Jinyuan Zhou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Performance ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Solution‐Processed High‐Performance p‐Type Perovskite NdAlO 3 Thin Films for Transparent Electronics

2020 ◽  
Vol 6 (3) ◽  
pp. 1901110
Author(s):  
Zhijie Xin ◽  
Yanan Ding ◽  
Yixin Zhu ◽  
Chuanyu Fu ◽  
Zhao Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Transparent Electronics ◽  
Solution Processed ◽  
P Type
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