In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).
A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.
The p-type Li:NiOx thin films were successfully fabricated through the SUV route at 150 °C.
Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.