A Site‐Specific Charge Carrier Control in Monolithic Integrated Amorphous Oxide Semiconductors and Circuits with Locally Induced Optical‐Doping Process

2019 ◽  
Vol 29 (39) ◽  
pp. 1904770
Author(s):  
Kyung‐Tae Kim ◽  
Seong‐Pil Jeon ◽  
Woobin Lee ◽  
Jeong‐Wan Jo ◽  
Jae Sang Heo ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Specific Charge ◽  
Oxide Semiconductors ◽  
Site Specific ◽  
Amorphous Oxide ◽  
A Site

scholarly journals Functional expression of a yeast mitochondrial intron-encoded protein requires RNA processing at a conserved dodecamer sequence at the 3' end of the gene.

1989 ◽  
Vol 9 (4) ◽  
pp. 1507-1512 ◽  
Author(s):  
H Zhu ◽  
H Conrad-Webb ◽  
X S Liao ◽  
P S Perlman ◽  
R A Butow
Keyword(s):  
Genetic Analysis ◽  
Rna Processing ◽  
Fold Increase ◽  
Functional Expression ◽  
Rrna Gene ◽  
Yeast Mitochondria ◽  
Wild Type ◽  
Site Specific ◽  
Var1 Gene ◽  
A Site

All mRNAs of yeast mitochondria are processed at their 3' ends within a conserved dodecamer sequence, 5'-AAUAAUAUUCUU-3'. A dominant nuclear suppressor, SUV3-I, was previously isolated because it suppresses a dodecamer deletion at the 3' end of the var1 gene. We have tested the effects of SUV3-1 on a mutant containing two adjacent transversions within a dodecamer at the 3' end of fit1, a gene located within the 1,143-base-pair intron of the 21S rRNA gene, whose product is a site-specific endonuclease required in crosses for the quantitative transmission of that intron to 21S alleles that lack it. The fit1 dodecamer mutations blocked both intron transmission and dodecamer cleavage, neither of which was suppressed by SUV3-1 when present in heterozygous or homozygous configurations. Unexpectedly, we found that SUV3-1 completely blocked cleavage of the wild-type fit1 dodecamer and, in SUV3-1 homozygous crosses, intron conversion. In addition, SUV3-1 resulted in at least a 40-fold increase in the amount of excised intron accumulated. Genetic analysis showed that these phenotypes resulted from the same mutation. We conclude that cleavage of a wild-type dodecamer sequence at the 3' end of the fit1 gene is essential for fit1 expression.

scholarly journals Consecutive sexual maturation observed in a rock shell population in the vicinity of the Fukushima Daiichi Nuclear Power Plant, Japan

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshihiro Horiguchi ◽  
Kayoko Kawamura ◽  
Yasuhiko Ohta
Keyword(s):  
Power Plant ◽  
Nuclear Power Plant ◽  
Sexual Maturation ◽  
Nuclear Power ◽  
Tohoku Earthquake ◽  
Site Specific ◽  
Thais Clavigera ◽  
Rock Shell ◽  
Fukushima Daiichi ◽  
A Site

AbstractIn 2012, after the accident at the Fukushima Daiichi Nuclear Power Plant (FDNPP) that followed the Tohoku earthquake and tsunami in March 2011, no rock shell (Thais clavigera; currently recognized as Reishia clavigera; Gastropoda, Neogastropoda, Muricidae) specimens were found near the plant from Hirono to Futaba Beach (a distance of approximately 30 km). In July 2016, however, rock shells were again found to inhabit the area. From April 2017 to May 2019, we collected rock shell specimens monthly at two sites near the FDNPP (Okuma and Tomioka) and at a reference site ~ 120 km south of the FDNPP (Hiraiso). We examined the gonads of the specimens histologically to evaluate their reproductive cycle and sexual maturation. The gonads of the rock shells collected at Okuma, ~ 1 km south of the FDNPP, exhibited consecutive sexual maturation during the 2 years from April 2017 to May 2019, whereas sexual maturation of the gonads of specimens collected at Hiraiso was observed only in summer. The consecutive sexual maturation of the gonads of the specimens collected at Okuma might not represent a temporary phenomenon but rather a site-specific phenotype, possibly caused by specific environmental factors near the FDNPP.

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

2006 ◽  
Vol 45 (5B) ◽  
pp. 4303-4308 ◽  
Author(s):  
Kenji Nomura ◽  
Akihiro Takagi ◽  
Toshio Kamiya ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Semiconductors ◽  
Amorphous Oxide
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