scholarly journals Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

2018 ◽  
Vol 97 (4) ◽  
Author(s):  
A. de Jamblinne de Meux ◽  
G. Pourtois ◽  
J. Genoe ◽  
P. Heremans
Keyword(s):  
Charge Carrier ◽  
Carrier Mobility ◽  
Electronic States ◽  
Charge Carrier Mobility ◽  
Amorphous Semiconductors ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
P Type

scholarly journals Effect of Ionizing Radiation on the Structure, Electro-Physical and Optical Characteristics of Cd1-xZnxTe Crystals

2019 ◽  
Vol 19 (3) ◽  
pp. 239-245
Author(s):  
P. M. Fochuk ◽  
V. P. Shafranyuk ◽  
A. I. Rarenko ◽  
A. I. Kanak ◽  
Ye. S. Nikonuk ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Optical Transmission ◽  
Charge Carrier Mobility ◽  
Optical Characteristics ◽  
Structural Perfection ◽  
Electrical Parameters ◽  
X Ray ◽  
P Type

Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation by g-, b- radiations were investigated. At 60Со source gamma-quanta irradiation with a dose of Ф≥ 105 Gy, a slight decrease of samples’ structure and optical transmission, an increase of holes concentration p and a decrease of charge carrier mobility m in p-type crystals was observed. Within 30-40 days, the values of p and m were relaxed to an initial ones. Changes in structural perfection, optical transmission and electricalparameters of samples irradiated by electrons were more significant.

The Influence of Nitrogen Position on Charge Carrier Mobility in Enantiopure Aza[6]helicene Crystals

2018 ◽  
Author(s):  
Francesco Salerno ◽  
Beth Rice ◽  
Julia Schmidt ◽  
Matthew J. Fuchter ◽  
Jenny Nelson ◽  
...  
Keyword(s):  
Solid State ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Chemical Structure ◽  
Crystal Packing ◽  
Charge Carrier Mobility ◽  
Individual Factor ◽  
Charge Mobility ◽  
Order Of Magnitude ◽  
Small Change

<p>The properties of an organic semiconductor are dependent on both the chemical structure of the molecule involved, and how it is arranged in the solid-state. It is challenging to extract the influence of each individual factor, as small changes in the molecular structure often dramatically change the crystal packing and hence solid-state structure. Here, we use calculations to explore the influence of the nitrogen position on the charge mobility of a chiral organic molecule when the crystal packing is kept constant. The transfer integrals for a series of enantiopure aza[6]helicene crystals sharing the same packing were analysed in order to identify the best supramolecular motifs to promote charge carrier mobility. The regioisomers considered differ only in the positioning of the nitrogen atom in the aromatic scaffold. The simulations showed that even this small change in the chemical structure has a strong effect on the charge transport in the crystal, leading to differences in charge mobility of up to one order of magnitude. Some aza[6]helicene isomers that were packed interlocked with each other showed high HOMO-HOMO integrals (up to 70 meV), whilst molecules arranged with translational symmetry generally afforded the highest LUMO-LUMO integrals (40 - 70 meV). As many of the results are not intuitively obvious, a computational approach provides additional insight into the design of new semiconducting organic materials.</p>

Assembly effect on the charge carrier mobility in quaterthiophene-based n/p-materials

2019 ◽  
Vol 7 (22) ◽  
pp. 6649-6655
Author(s):  
A. López-Andarias ◽  
C. Atienza ◽  
J. López-Andarias ◽  
W. Matsuda ◽  
T. Sakurai ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Self Assembly ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Assembly Process ◽  
Charge Mobility

Effect of the peptide-based quaterthiophene self-assembly process on the charge mobility properties of the n/p-materials formed is studied.

Sign in / Sign up

Export Citation Format

Share Document