scholarly journals 2D Materials: Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping (Adv. Funct. Mater. 16/2018)

2018 ◽  
Vol 28 (16) ◽  
pp. 1870105
Author(s):  
Kehao Zhang ◽  
Brian M. Bersch ◽  
Jaydeep Joshi ◽  
Rafik Addou ◽  
Christopher R. Cormier ◽  
...  
Keyword(s):  
2D Materials ◽  
Monolayer Mos2 ◽  
Substitutional Doping

scholarly journals Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

2018 ◽  
Vol 28 (16) ◽  
pp. 1706950 ◽  
Author(s):  
Kehao Zhang ◽  
Brian M. Bersch ◽  
Jaydeep Joshi ◽  
Rafik Addou ◽  
Christopher R. Cormier ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Substitutional Doping

scholarly journals Chlorosulfuric acid-assisted production of functional 2D materials

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohsen Moazzami Gudarzi ◽  
Maryana Asaad ◽  
Boyang Mao ◽  
Gergo Pinter ◽  
Jianqiang Guo ◽  
...  
Keyword(s):  
Hexagonal Boron Nitride ◽  
2D Materials ◽  
Real Life ◽  
Large Area ◽  
Polar Solvents ◽  
Aspect Ratios ◽  
Two Dimensional Materials ◽  
Liquid Phase Exfoliation

AbstractThe use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.

scholarly journals In situ TEM Approaches to Controlling the Growth of Semiconductors on 2D Materials

2019 ◽  
Vol 25 (S2) ◽  
pp. 1424-1425
Author(s):  
Priyanka Periwal ◽  
Joachim Dahl Thomsen ◽  
Mark C. Reuter ◽  
Dmitri Zakharov ◽  
Lynne Gignac ◽  
...  
Keyword(s):  
2D Materials ◽  
In Situ Tem

scholarly journals Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

Small ◽  
2020 ◽  
Vol 16 (42) ◽  
pp. 2070229
Author(s):  
Jian Tang ◽  
Zheng Wei ◽  
Qinqin Wang ◽  
Yu Wang ◽  
Bo Han ◽  
...  
Keyword(s):  
Oxygen Doping ◽  
Substitutional Doping

Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices

2019 ◽  
Vol 11 (13) ◽  
pp. 12613-12621 ◽  
Author(s):  
Youngchan Kim ◽  
Hunyoung Bark ◽  
Byunggil Kang ◽  
Changgu Lee
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Monolayer Mos2 ◽  
Wafer Scale ◽  
Substitutional Doping

scholarly journals Tunable Photodetectors via In Situ Thermal Conversion of TiS3 to TiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 711 ◽  
Author(s):  
Foad Ghasemi ◽  
Riccardo Frisenda ◽  
Eduardo Flores ◽  
Nikos Papadopoulos ◽  
Robert Biele ◽  
...  
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Thermal Conversion ◽  
Wide Bandgap ◽  
Common Source ◽  
Many Body ◽  
Two Dimensional Materials ◽  
Materials Research ◽  
Titanium Trisulfide

In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS3), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS3 in air above 300 °C gradually converts it into TiO2, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS3 nanoribbons and its influence on the optoelectronic properties of TiS3-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS3 devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO2-xSx) when in-creasing the amount of oxygen and reducing the amount of sulfur.

Atomic Layer Controlled Substitutional Doping With Lithium in ZnSe

1991 ◽  
Vol 222 ◽  
Author(s):  
Ziqiang Zhu ◽  
Mitsuo Kawashima ◽  
Takafumi Yao
Keyword(s):  
Adsorption Process ◽  
Intensity Variation ◽  
Atomic Layer ◽  
High Energy ◽  
Substitutional Doping ◽  
Dynamical Behaviors ◽  
Adsorption Processes ◽  
Li Adsorption ◽  
P Type

ABSTRACTThe detailed observation of dynamical behaviors of reflection high energy electron diffraction (RHEED) patterns during the adsorption processes of Li, Se and Zn is carried out. It is found that the RHEED intensity variation reflects the Li surface coverage during Li adsorption process on a Secovered surface. This fact enables one to control quantitatively the doping of Li “in situ”. A new method for atomic-layer controlled substitutional doping of ZnSe layers with lithium is proposed based on the RHEED investigations. The method allows the incorporation of Li dopants on Zn-sites of ZnSe by monitoring the RHEED patterns and intensities, and is expected to suppress the compensation by Li interstitials. Photoluminescence spectrum shows the growth of high quality p-type layers.

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