scholarly journals Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping

2018 ◽  
Vol 28 (16) ◽  
pp. 1706950 ◽  
Author(s):  
Kehao Zhang ◽  
Brian M. Bersch ◽  
Jaydeep Joshi ◽  
Rafik Addou ◽  
Christopher R. Cormier ◽  
...  
Keyword(s):  
Monolayer Mos2 ◽  
Substitutional Doping

scholarly journals 2D Materials: Tuning the Electronic and Photonic Properties of Monolayer MoS2 via In Situ Rhenium Substitutional Doping (Adv. Funct. Mater. 16/2018)

2018 ◽  
Vol 28 (16) ◽  
pp. 1870105
Author(s):  
Kehao Zhang ◽  
Brian M. Bersch ◽  
Jaydeep Joshi ◽  
Rafik Addou ◽  
Christopher R. Cormier ◽  
...  
Keyword(s):  
2D Materials ◽  
Monolayer Mos2 ◽  
Substitutional Doping

scholarly journals Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

Small ◽  
2020 ◽  
Vol 16 (42) ◽  
pp. 2070229
Author(s):  
Jian Tang ◽  
Zheng Wei ◽  
Qinqin Wang ◽  
Yu Wang ◽  
Bo Han ◽  
...  
Keyword(s):  
Oxygen Doping ◽  
Substitutional Doping

Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices

2019 ◽  
Vol 11 (13) ◽  
pp. 12613-12621 ◽  
Author(s):  
Youngchan Kim ◽  
Hunyoung Bark ◽  
Byunggil Kang ◽  
Changgu Lee
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Monolayer Mos2 ◽  
Wafer Scale ◽  
Substitutional Doping

Atomic Layer Controlled Substitutional Doping With Lithium in ZnSe

1991 ◽  
Vol 222 ◽  
Author(s):  
Ziqiang Zhu ◽  
Mitsuo Kawashima ◽  
Takafumi Yao
Keyword(s):  
Adsorption Process ◽  
Intensity Variation ◽  
Atomic Layer ◽  
High Energy ◽  
Substitutional Doping ◽  
Dynamical Behaviors ◽  
Adsorption Processes ◽  
Li Adsorption ◽  
P Type

ABSTRACTThe detailed observation of dynamical behaviors of reflection high energy electron diffraction (RHEED) patterns during the adsorption processes of Li, Se and Zn is carried out. It is found that the RHEED intensity variation reflects the Li surface coverage during Li adsorption process on a Secovered surface. This fact enables one to control quantitatively the doping of Li “in situ”. A new method for atomic-layer controlled substitutional doping of ZnSe layers with lithium is proposed based on the RHEED investigations. The method allows the incorporation of Li dopants on Zn-sites of ZnSe by monitoring the RHEED patterns and intensities, and is expected to suppress the compensation by Li interstitials. Photoluminescence spectrum shows the growth of high quality p-type layers.

Probing the Effect of Chemical Dopant Phase on Photoluminescence of Monolayer MoS2 Using in Situ Raman Microspectroscopy

2019 ◽  
Vol 123 (25) ◽  
pp. 15738-15743 ◽  
Author(s):  
Blake Birmingham ◽  
Jiangtan Yuan ◽  
Matthias Filez ◽  
Donglong Fu ◽  
Jonathan Hu ◽  
...  
Keyword(s):  
Raman Microspectroscopy ◽  
Monolayer Mos2 ◽  
In Situ Raman

Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis

ACS Nano ◽  
2020 ◽  
Vol 14 (4) ◽  
pp. 4326-4335 ◽  
Author(s):  
Tianyi Zhang ◽  
Kazunori Fujisawa ◽  
Fu Zhang ◽  
Mingzu Liu ◽  
Michael C. Lucking ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Substitutional Doping ◽  
Phase Precursor ◽  
Metal Dichalcogenides

scholarly journals Direct Observation of Monolayer MoS2 Prepared by CVD Using In-Situ Differential Reflectance Spectroscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1640 ◽  
Author(s):  
Yina Wang ◽  
Lei Zhang ◽  
Chenhui Su ◽  
Hang Xiao ◽  
Shanshan Lv ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Reflectance Spectroscopy ◽  
Ex Situ ◽  
In Situ Observation ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Metal Dichalcogenides

The in-situ observation is of great significance to the study of the growth mechanism and controllability of two-dimensional transition metal dichalcogenides (TMDCs). Here, the differential reflectance spectroscopy (DRS) was performed to monitor the growth of molybdenum disulfide (MoS2) on a SiO2/Si substrate prepared by chemical vapor deposition (CVD). A home-built in-situ DRS setup was applied to monitor the growth of MoS2 in-situ. The formation and evolution of monolayer MoS2 are revealed by differential reflectance (DR) spectra. The morphology, vibration mode, absorption characteristics and thickness of monolayer MoS2 have been confirmed by optical microscopy, Raman spectroscopy, ex-situ DR spectra, and atomic force microscopy (AFM) respectively. The results demonstrated that DRS was a powerful tool for in-situ observations and has great potential for growth mechanism and controllability of TMDCs prepared by CVD. To the best of the authors’ knowledge, it was the first report in which the CVD growth of two-dimensional TMDCs has been investigated in-situ by reflectance spectroscopy.

Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

2013 ◽  
Vol 377 (19-20) ◽  
pp. 1362-1367 ◽  
Author(s):  
Qu Yue ◽  
Shengli Chang ◽  
Shiqiao Qin ◽  
Jingbo Li
Keyword(s):  
First Principles ◽  
Monolayer Mos2 ◽  
First Principles Study ◽  
Substitutional Doping

scholarly journals Direct observation of the CVD growth of monolayer MoS2 using in situ optical spectroscopy

2019 ◽  
Vol 10 ◽  
pp. 557-564 ◽  
Author(s):  
Claudia Beatriz López-Posadas ◽  
Yaxu Wei ◽  
Wanfu Shen ◽  
Daniel Kahr ◽  
Michael Hohage ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Spectroscopy ◽  
Chemical Vapor ◽  
Semiconductor Materials ◽  
Transition Metal Dichalcogenide ◽  
Monolayer Mos2 ◽  
In Situ Study ◽  
Sapphire Substrates ◽  
Cvd Growth

Real-time monitoring is essential for understanding and precisely controlling of growth of two-dimensional transition metal dichalcogenide (2D TMDC) materials. However, it is very challenging to carry out such studies during chemical vapor deposition (CVD). Here, we report the first, real time, in situ study of the CVD growth of 2D TMDCs. More specifically, the CVD growth of a molybdenum disulfide (MoS2) monolayer on sapphire substrates has been monitored in situ using differential transmittance spectroscopy (DTS). The growth of the MoS2 monolayer can be precisely followed by observation of the evolution of the characteristic optical features. Consequently, a strong correlation between the growth rate of the MoS2 monolayer and the temperature distribution in the CVD reactor has been revealed. Our results demonstrate the great potential of real time, in situ optical spectroscopy to assist the precisely controlled growth of 2D semiconductor materials.

scholarly journals In situ high temperature atomic level dynamics of large inversion domain formations in monolayer MoS2

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1901-1913 ◽  
Author(s):  
Jun Chen ◽  
Si Zhou ◽  
Yi Wen ◽  
Gyeong Hee Ryu ◽  
Christopher Allen ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Dark Field ◽  
Atomic Level ◽  
Monolayer Mos2 ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field

Here we study the high-temperature formation and dynamics of large inversion domains (IDs) that form in monolayer MoS2 using atomic-resolution annular dark-field scanning transmission electron microscopy (ADF-STEM) with an in situ heating stage.

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