Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices

2019 ◽  
Vol 11 (13) ◽  
pp. 12613-12621 ◽  
Author(s):  
Youngchan Kim ◽  
Hunyoung Bark ◽  
Byunggil Kang ◽  
Changgu Lee
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Monolayer Mos2 ◽  
Wafer Scale ◽  
Substitutional Doping

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Versatile Solution‐Processed Organic–Inorganic Hybrid Superlattices for Ultraflexible and Transparent High‐Performance Optoelectronic Devices

2021 ◽  
pp. 2103285
Author(s):  
Minh Nhut Le ◽  
Kang‐Jun Baeg ◽  
Kyung‐Tae Kim ◽  
Seung‐Han Kang ◽  
Byung Doo Choi ◽  
...  
Keyword(s):  
High Performance ◽  
Optoelectronic Devices ◽  
Solution Processed ◽  
Inorganic Hybrid

Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor

2021 ◽  
Vol 129 (14) ◽  
pp. 145106
Author(s):  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Mousam Charan Sahu ◽  
Sanjeev K. Gupta ◽  
Saroj Prasad Dash ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Free Field ◽  
Monolayer Mos2 ◽  
Effect Transistor

scholarly journals Graphene-Based Semiconductor Heterostructures for Photodetectors

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 350 ◽  
Author(s):  
Dong Shin ◽  
Suk-Ho Choi
Keyword(s):  
Optical Properties ◽  
High Performance ◽  
Optoelectronic Devices ◽  
Semiconductor Heterostructures ◽  
Device Physics ◽  
Electrical And Optical Properties ◽  
Design Performance ◽  
Future Challenges ◽  
Transparent Conductive Electrodes

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.

Oriented Quasi-2D Perovskites for High Performance Optoelectronic Devices

2018 ◽  
Vol 30 (51) ◽  
pp. 1804771 ◽  
Author(s):  
Rong Yang ◽  
Renzhi Li ◽  
Yu Cao ◽  
Yingqiang Wei ◽  
Yanfeng Miao ◽  
...  
Keyword(s):  
High Performance ◽  
Optoelectronic Devices

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

scholarly journals Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-14 ◽  
Author(s):  
Jie Jiang ◽  
Tao Xu ◽  
Junpeng Lu ◽  
Litao Sun ◽  
Zhenhua Ni
Keyword(s):  
High Performance ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Deep Understanding ◽  
Building Blocks ◽  
Research Progress ◽  
Defect Engineering ◽  
Plasma Chemical ◽  
Design And Optimization ◽  
Novel Structure

Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices. With reducing dimensionality from 3D to 2D, the inevitable defects will play more important roles in determining the properties of materials. In order to maximize the functionality of 2D materials, deep understanding and precise manipulation of the defects are indispensable. In the recent years, increasing research efforts have been made on the observation, understanding, manipulation, and control of defects in 2D materials. Here, we summarize the recent research progress of defect engineering on 2D materials. The defect engineering triggered by electron beam (e-beam), plasma, chemical treatment, and so forth is comprehensively reviewed. Firstly, e-beam irradiation-induced defect evolution, structural transformation, and novel structure fabrication are introduced. With the assistance of a high-resolution electron microscope, the dynamics of defect engineering can be visualized in situ. Subsequently, defect engineering employed to improve the performance of 2D devices by means of other methods of plasma, chemical, and ozone treatments is reviewed. At last, the challenges and opportunities of defect engineering on promoting the development of 2D materials are discussed. Through this review, we aim to build a correlation between defects and properties of 2D materials to support the design and optimization of high-performance electronic and optoelectronic devices.

A graphene/single GaAs nanowire Schottky junction photovoltaic device

Nanoscale ◽  
2018 ◽  
Vol 10 (19) ◽  
pp. 9212-9217 ◽  
Author(s):  
Yanbin Luo ◽  
Xin Yan ◽  
Jinnan Zhang ◽  
Bang Li ◽  
Yao Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Optoelectronic Devices ◽  
Photovoltaic Device ◽  
Schottky Junction ◽  
Gaas Nanowire

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices.

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