scholarly journals Porous Silicon Nanostructures as Effective Faradaic Electrochemical Sensing Platforms

2019 ◽  
Vol 29 (24) ◽  
pp. 1809206 ◽  
Author(s):  
Keying Guo ◽  
Apoorva Sharma ◽  
Rou Jun Toh ◽  
Eva Alvárez de Eulate ◽  
Thomas R. Gengenbach ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Sensing ◽  
Silicon Nanostructures ◽  
Sensing Platforms

Noise mediated regularity of porous silicon nanostructures

2009 ◽  
Vol 94 (13) ◽  
pp. 133103 ◽  
Author(s):  
J. Escorcia-Garcia ◽  
V. Agarwal ◽  
P. Parmananda
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures

Quantum Dots as Components of Electrochemical Sensing Platforms for the Detection of Environmental and Food Pollutants: a Review

2017 ◽  
Vol 100 (4) ◽  
pp. 950-961 ◽  
Author(s):  
María Pedrero ◽  
Susana Campuzano ◽  
José M Pingarrón
Keyword(s):  
Quantum Dots ◽  
Signal Amplification ◽  
Cost Effective ◽  
Ease Of Use ◽  
Electrochemical Sensing ◽  
Multiplexed Detection ◽  
Sensing Platforms ◽  
Target Analytes

Abstract The determination of organic and inorganic environmental and food pollutants is a key matter of concern in analytical chemistry due to their effects as a serious threat to human health. Focusing on this issue, several methodologies involving the use of nanostructured electrochemical platforms have been recently reported in the literature. Among these methods, those employing the use of quantum dots (QDs) stand out because of features such as signal amplification, good reproducibility and selectivity, and the possibility for multiplexed detection, and because they preserve the outstanding characteristics of electrochemical methodologies with respect to simplicity, ease-of-use, and cost-effective instrumentation. This review describes recent electrochemical strategies, in which design QDs play a key role, for the determination of pollutants in food and environmental samples. The particular role of QDs in the reported methodologies, their preparation, and the electrochemical platform design, as well as the advantages that QDs provide in the analysis of target analytes, are critically discussed.

Microwave Effects on Chemical Functionalization of Hydrogen-Terminated Porous Silicon Nanostructures

2008 ◽  
Vol 112 (42) ◽  
pp. 16622-16628 ◽  
Author(s):  
Alain Petit ◽  
Michel Delmotte ◽  
André Loupy ◽  
Jean-Noël Chazalviel ◽  
François Ozanam ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Nanostructures ◽  
Chemical Functionalization ◽  
Microwave Effects

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Prolonged controlled delivery of nerve growth factor using porous silicon nanostructures

2017 ◽  
Vol 257 ◽  
pp. 51-59 ◽  
Author(s):  
Neta Zilony ◽  
Michal Rosenberg ◽  
Liran Holtzman ◽  
Hadas Schori ◽  
Orit Shefi ◽  
...  
Keyword(s):  
Nerve Growth Factor ◽  
Growth Factor ◽  
Porous Silicon ◽  
Controlled Delivery ◽  
Silicon Nanostructures ◽  
Nerve Growth

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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