scholarly journals High Carrier Mobility, Electrical Conductivity, and Optical Transmittance in Epitaxial SrVO 3 Thin Films

2019 ◽  
Vol 29 (14) ◽  
pp. 1808432 ◽  
Author(s):  
Mathieu Mirjolet ◽  
Florencio Sánchez ◽  
Josep Fontcuberta
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

2018 ◽  
Vol 4 (9) ◽  
pp. eaat5780 ◽  
Author(s):  
Xiaoxue Wang ◽  
Xu Zhang ◽  
Lei Sun ◽  
Dongwook Lee ◽  
Sunghwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Radio Frequency Identification ◽  
Acid Treatment ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Great Promise ◽  
High Electrical Conductivity ◽  
High Carrier Mobility ◽  
High Carrier

Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2V−1s−1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

p-type conductive NiOx: Cu thin films with high carrier mobility deposited by ion beam assisted deposition

2018 ◽  
Vol 44 (3) ◽  
pp. 3291-3296 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Pei-Jie Chen ◽  
Sin-Liang Ou ◽  
Cheng-Yi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates

2005 ◽  
Vol 17 (12) ◽  
pp. 1527-1531 ◽  
Author(s):  
A. T. Findikoglu ◽  
W. Choi ◽  
V. Matias ◽  
T. G. Holesinger ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Silicon Thin Films ◽  
High Carrier Mobility ◽  
High Carrier

Solution processed W-doped In2O3 thin films with high carrier mobility

2020 ◽  
Vol 46 (2) ◽  
pp. 2173-2177 ◽  
Author(s):  
Yanqiu Liu ◽  
Shunjin Zhu ◽  
Renhuai Wei ◽  
Ling Hu ◽  
Xianwu Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Solution Processed ◽  
High Carrier Mobility ◽  
High Carrier

Low temperature plasma processing of nc-Si/a-SiNx:H QD thin films with high carrier mobility and preferred (220) crystal orientation: a promising material for third generation solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (70) ◽  
pp. 36929-36939 ◽  
Author(s):  
Basudeb Sain ◽  
Debajyoti Das
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Crystal Orientation ◽  
Carrier Mobility ◽  
Third Generation ◽  
Temperature Plasma ◽  
High Carrier Mobility ◽  
High Carrier

The nc-Si-QDs/a-SiNx:H (∼5.7–1.3 nm) thin-films grown by low-temperature Inductively-coupled plasma, possess high carrier-mobility, electrical-conductivity, photosensitivity and preferred (220) crystal orientation, suitable for third-generation solar cells.

High Carrier Mobility Polythiophene Thin Films: Structure Determination by Experiment and Theory

2007 ◽  
Vol 19 (6) ◽  
pp. 833-837 ◽  
Author(s):  
D. M. DeLongchamp ◽  
R. J. Kline ◽  
E. K. Lin ◽  
D. A. Fischer ◽  
L. J. Richter ◽  
...  
Keyword(s):  
Thin Films ◽  
Structure Determination ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Graphene- and Carbon-Nanotube-Based Transparent Electrodes for Semitransparent Solar Cells

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1503 ◽  
Author(s):  
Kyu-Tae Lee ◽  
Dong Park ◽  
Hyoung Baac ◽  
Seungyong Han
Keyword(s):  
Solar Cells ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
Future Research ◽  
Transparent Electrodes ◽  
Metal Grid ◽  
High Optical Transmittance ◽  
Doped Graphene ◽  
High Carrier Mobility ◽  
High Carrier

A substantial amount of attention has been paid to the development of transparent electrodes based on graphene and carbon nanotubes (CNTs), owing to their exceptional characteristics, such as mechanical and chemical stability, high carrier mobility, high optical transmittance, and high conductivity. This review highlights the latest works on semitransparent solar cells (SSCs) that exploit graphene- and CNT-based electrodes. Their prominent optoelectronic properties and various fabrication methods, which rely on laminated graphene/CNT, doped graphene/CNT, a hybrid graphene/metal grid, and a solution-processed graphene mesh, with applications in SSCs are described in detail. The current difficulties and prospects for future research are also discussed.

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