scholarly journals Erratum: Phase transitions via selective elemental vacancy engineering in complex oxide thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sang A. Lee ◽  
Hoidong Jeong ◽  
Sungmin Woo ◽  
Jae-Yeol Hwang ◽  
Si-Young Choi ◽  
...  
2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sang A. Lee ◽  
Hoidong Jeong ◽  
Sungmin Woo ◽  
Jae-Yeol Hwang ◽  
Si-Young Choi ◽  
...  

Abstract Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.


APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 051120
Author(s):  
Clemens Mart ◽  
Thomas Kämpfe ◽  
Kati Kühnel ◽  
Malte Czernohorsky ◽  
Sabine Kolodinski ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2018 ◽  
Vol 452 ◽  
pp. 190-200 ◽  
Author(s):  
Thomas Götsch ◽  
Daniel Hauser ◽  
Norbert Köpfle ◽  
Johannes Bernardi ◽  
Bernhard Klötzer ◽  
...  

2018 ◽  
Vol 20 (8) ◽  
pp. 5636-5643 ◽  
Author(s):  
Christoph Möller ◽  
Hanna Fedderwitz ◽  
Claudine Noguera ◽  
Jacek Goniakowski ◽  
Niklas Nilius

STM and DFT calculations are employed to explore structural phase transitions in thin copper-oxide films grown on Au(111).


2019 ◽  
Vol 33 (1) ◽  
pp. 205-212 ◽  
Author(s):  
Gertjan Koster ◽  
Dave H. A. Blank ◽  
Guus A. J. H. M. Rijnders

Abstract For thin film synthesis of complex oxides, one of the most important issues has always been how to oxidise the material. For a technique like pulsed laser deposition, a key benefit is the relatively high oxygen background pressure one can operate at, and therefor oxidation should be relatively straightforward. However, understanding the microscopic oxidation mechanisms turns out to be rather difficult. In this perspective, we give a brief overview of the sources of oxidation for complex oxide thin films grown by pulsed laser deposition. While it is clear what these sources are, their role in the kinetics of the formation of the crystal structure and oxygen stoichiometry is not fully understood.


Small ◽  
2008 ◽  
Vol 5 (2) ◽  
pp. 265-271 ◽  
Author(s):  
Zorica Konstantinović ◽  
José Santiso ◽  
Lluis Balcells ◽  
Benjamín Martínez

Author(s):  
M M Dementyeva ◽  
K E Prikhodko ◽  
B A Gurovich ◽  
Z V Bukina ◽  
D A Komarov ◽  
...  

MRS Bulletin ◽  
2008 ◽  
Vol 33 (11) ◽  
pp. 1047-1050 ◽  
Author(s):  
Nicola A. Spaldin ◽  
R. Ramesh

AbstractIn this article, we review current research efforts to control the magnetic behavior of complex oxide thin films using electric fields. After providing fundamental definitions of magnetoelectric response, we survey materials, architectures, and mechanisms that exhibit promise for such electric-field control of magnetism. Finally, we mention ideas for future research and discuss prospects for the field.


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