High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

2015 ◽  
Vol 25 (27) ◽  
pp. 4219-4227 ◽  
Author(s):  
Dong-Ho Kang ◽  
Myung-Soo Kim ◽  
Jaewoo Shim ◽  
Jeaho Jeon ◽  
Hyung-Youl Park ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenide ◽  
Self Assembled Monolayer ◽  
Self Assembled

scholarly journals Author Correction: Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Md Hasibul Alam ◽  
Zifan Xu ◽  
Sayema Chowdhury ◽  
Zhanzhi Jiang ◽  
Deepyanti Taneja ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Lithium Ion ◽  
Transition Metal Dichalcogenide

scholarly journals High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

Performances of Sexithiophene Based Thin-Film Transistor Using Self-Assembled Monolayers

1997 ◽  
Vol 488 ◽  
Author(s):  
J. Collet ◽  
O. Tharaud ◽  
C. Legrand ◽  
A. Chapoton ◽  
D. Vuillaume
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
High Performance ◽  
Film Formation ◽  
Substrate Surface ◽  
High Surface ◽  
Thin Film Transistor ◽  
Subthreshold Slope ◽  
Self Assembled Monolayer ◽  
Self Assembled

AbstractHigh performance thin-film transistors (TFT) made of conducting oligomers are obtained when the organic films are well ordered at a molecular level. Highly ordered films are obtained provided that oligomers have a sufficient mobility on the substrate surface during film formation. One possible way to fulfill such a condition is to evaporate oligomers on heated substrates [1,2]. In this work, we suggest that a high surface mobility is obtained by a chemical functionalization of the silicon dioxide surface, and the corresponding improvements of the TFT performances are evidenced. A self-assembled monolayer of octadecyltrichlorosilane (OTS) was deposited on the SiO2 by chemisorption from solution before the evaporation of sexithiophene film. Room temperature current-voltage measurements indicate that the presence of the OTS monolayer improves TFT performances : threshold voltage is decreased, subthreshold slope is decreased, a high current ratio Ion/Ioff is obtained for a reduced gate voltage excursion, the fieldeffect mobility is slightly increased. We have also fabricated and characterized a nanometer scale organic FET (gate length = 50 nm) made of 6T films and only with a self-assembled monolayer as the insulating film between the degenerated silicon substrate (gate) and the conducting channel (no thick SiO2, we call it « oxide-free » organic FET). Performances of this nanometer size organic FETs are the following : subthreshold slope of 0.35V/dec, threshold voltage of −1.3V, effective mobility of 2×10−4 cm2/V.s.

scholarly journals Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Md Hasibul Alam ◽  
Zifan Xu ◽  
Sayema Chowdhury ◽  
Zhanzhi Jiang ◽  
Deepyanti Taneja ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Lithium Ion ◽  
Transition Metal Dichalcogenide

Soft-landing Isolation of Gas-phase-synthesized Transition Metal−Benzene Complexes into a Fluorinated Self-assembled Monolayer Matrix

2008 ◽  
Vol 112 (40) ◽  
pp. 15824-15831 ◽  
Author(s):  
Shuhei Nagaoka ◽  
Kaori Ikemoto ◽  
Takeshi Matsumoto ◽  
Masaaki Mitsui ◽  
Atsushi Nakajima
Keyword(s):  
Transition Metal ◽  
Gas Phase ◽  
Soft Landing ◽  
Self Assembled Monolayer ◽  
Self Assembled

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6840-6848 ◽  
Author(s):  
Daniel Kälblein ◽  
Hyeyeon Ryu ◽  
Frederik Ante ◽  
Bernhard Fenk ◽  
Kersten Hahn ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Dielectric ◽  
Zno Nanowire ◽  
Self Assembled Monolayer ◽  
Nanowire Transistors ◽  
Gate Electrodes ◽  
Self Assembled
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