Highly Sensitive Non-Classical Strain Gauge Using Organic Heptazole Thin-Film Transistor Circuit on a Flexible Substrate

2014 ◽  
Vol 24 (28) ◽  
pp. 4413-4419 ◽  
Author(s):  
Seung Hee Nam ◽  
Pyo Jin Jeon ◽  
Sung Wook Min ◽  
Young Tack Lee ◽  
Eun Young Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Strain Gauge ◽  
Flexible Substrate ◽  
Thin Film Transistor ◽  
Classical Strain ◽  
Highly Sensitive ◽  
Transistor Circuit

scholarly journals Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Guk-Jin Jeon ◽  
Seung-Hwan Lee ◽  
Seung Hee Lee ◽  
Jun-Bo Shim ◽  
Jong-Hyun Ra ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Matrix ◽  
Highly Sensitive ◽  
Fingerprint Sensor

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic

2004 ◽  
Vol 39 (9) ◽  
pp. 1477-1486 ◽  
Author(s):  
A. Nathan ◽  
A. Kumar ◽  
K. Sakariya ◽  
P. Servati ◽  
S. Sambandan ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Circuit Integration ◽  
Transistor Circuit

scholarly journals Double-gate thin film transistor with suspended-gate applicable to tactile force sensor

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
An Hoang-Thuy Nguyen ◽  
Manh-Cuong Nguyen ◽  
Seongyong Cho ◽  
Anh-Duy Nguyen ◽  
Hyewon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Drain Current ◽  
Force Sensor ◽  
Air Gap ◽  
Insulator Layer ◽  
Highly Sensitive ◽  
Highly Sensitive Sensors ◽  
Effective Integration

Abstract This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive tactile force sensor. The suspended membrane gate with an air gap as the insulator layer is formed by multiple photolithography steps and photoresist sacrificial layers. The viscosity of the photoresist and the spin speed was used to modify the thickness of the air gap during the coating process. The tactile force was measured by monitoring the drain current of the TFT as the force changed the thickness of the air gap. The sensitivity of the devices was enhanced by an optimal gate size and low Young’s modulus of the gate material. This simple process has the potential for the production of small, versatile, and highly sensitive sensors.

High-speed thin-film transistor on flexible substrate fabricated at room temperature

2006 ◽  
Vol 42 (23) ◽  
pp. 1365 ◽  
Author(s):  
J. Vaillancourt ◽  
X. Lu ◽  
X. Han ◽  
D.C. Janzen
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Room Temperature ◽  
Flexible Substrate ◽  
Thin Film Transistor

P‐131: TCAD Modeling of Mechanical Stress for Simulation of Thin Film Transistor on Flexible Substrate

2019 ◽  
Vol 50 (1) ◽  
pp. 1606-1609 ◽  
Author(s):  
sungWon Kong ◽  
Heetaek Lim ◽  
Andreas Hoessinger ◽  
Eric Guichard
Keyword(s):  
Thin Film ◽  
Mechanical Stress ◽  
Flexible Substrate ◽  
Thin Film Transistor
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