E-Field Control of Exchange Bias and Deterministic Magnetization Switching in AFM/FM/FE Multiferroic Heterostructures

2011 ◽  
Vol 21 (13) ◽  
pp. 2593-2598 ◽  
Author(s):  
Ming Liu ◽  
Jing Lou ◽  
Shandong Li ◽  
Nian X. Sun
2014 ◽  
Vol 783-786 ◽  
pp. 1623-1627 ◽  
Author(s):  
Wolfgang Kleemann ◽  
Pavel Borisov ◽  
Xi Chen ◽  
Carolin Schmitz-Antoniak

Novel methods of switching magnetism with electric fields and vice versa, and aiming at magnetoelectric (ME) data processing are reported. First, the patented MERAM@ uses the electric field control of exchange bias via an epitaxial Cr2O3 layer and exchange coupling to a Pt/Co/Pt trilayer. It promises to crucially reduce Joule energy losses in RAM devices. Second, magnetic switching of the electric polarization by a transverse magnetic field in a 3-1 composite of a vertically poled BaTiO3 thick film embedding CoFe2O4 nanopillars produces a regular surface polarization pattern with rectangular symmetry. Its possible use for data processing is discussed.


2019 ◽  
Vol 481 ◽  
pp. 227-233 ◽  
Author(s):  
W.C. Zheng ◽  
D.X. Zheng ◽  
Y.C. Wang ◽  
D. Li ◽  
C. Jin ◽  
...  

2020 ◽  
Vol 2 (8) ◽  
pp. 2629-2637
Author(s):  
Champa Lal Prajapat ◽  
Harsh Bhatt ◽  
Yogesh Kumar ◽  
T. V. Chandrasekhar Rao ◽  
Prasant K. Mishra ◽  
...  

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085320
Author(s):  
Maxime Vergès ◽  
Vinod Kumar ◽  
Po-Hung Lin ◽  
Stéphane Mangin ◽  
Chih-Huang Lai

2016 ◽  
Vol 108 (4) ◽  
pp. 042403 ◽  
Author(s):  
Xiaobin Guo ◽  
Yalu Zuo ◽  
Dong Li ◽  
Baoshan Cui ◽  
Kai Wu ◽  
...  

2012 ◽  
Vol 100 (13) ◽  
pp. 132409 ◽  
Author(s):  
T. X. Nan ◽  
Z. Y. Zhou ◽  
J. Lou ◽  
M. Liu ◽  
X. Yang ◽  
...  

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